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    Single-operation method of cleaning semiconductors after final polishing
    9.
    发明授权
    Single-operation method of cleaning semiconductors after final polishing 失效
    最终抛光后清洗半导体的单次操作方法

    公开(公告)号：US06230720B1

    公开(公告)日：2001-05-15

    申请号：US09606728

    申请日：2000-06-29

    申请人： M. Rao Yalamanchili ,  Kari B. Myli ,  Larry W. Shive

    发明人： M. Rao Yalamanchili ,  Kari B. Myli ,  Larry W. Shive

    IPC分类号： C23G102

    CPC分类号： H01L21/02052 ,  Y10S134/902

    摘要： A process for cleaning a final polished semiconductor wafer in a single operation (i.e., following final polishing, a process or action is directed at the wafer which includes drying the wafer only once, thereby yielding a polished wafer surface substantially free of contaminants). The process comprising contacting the polished wafer with an aqueous solution comprising an oxidizing agent to oxidize organic carbon on the surface of the polished wafer. After oxidizing the organic carbon, immersing the polished wafer in an megasonically agitated alkaline cleaning solution to reduce the surface concentration of contaminant particles exceeding 0.2 &mgr;m in diameter. Withdrawing the polished wafer from the alkaline cleaning solution and rinsing it with deionized water. After rinsing, immersing the polished wafer in an acidic cleaning solution to reduce the surface concentration of contaminant metal atoms. Withdrawing the polished wafer from the acidic cleaning solution and immersing it in an ozonated aqueous bath. Withdrawing the polished wafer from the aqueous bath and drying the wafer. The process is further characterized by the absence of a step in which the surface of the polished wafer is dried between oxidizing organic carbon on the surface and immersing the wafer in the ozonated aqueous bath.

    摘要翻译： 用于在单次操作中清洁最终抛光的半导体晶片的方法（即，在最终抛光之后，将晶片进行直接干燥，从而产生基本上没有污染物的抛光晶片表面）。 该方法包括使抛光的晶片与包含氧化剂的水溶液接触以氧化抛光晶片的表面上的有机碳。 氧化有机碳后，将经抛光的晶片浸入经过搅拌的碱性清洗溶液中，以减少直径超过0.2μm的污染物颗粒的表面浓度。 从碱性清洁溶液中取出抛光的晶片，并用去离子水冲洗。 冲洗后，将抛光的晶片浸入酸性清洗溶液中以降低污染金属原子的表面浓度。 将抛光的晶片从酸性清洁溶液中取出并将其浸入臭氧水浴中。 从水浴中取出抛光的晶片并干燥晶片。 该方法的特征还在于不存在在表面上氧化有机碳并将晶片浸入臭氧水浴中之后干燥抛光晶片的表面的步骤。