发明授权
US06233198B1 High density flash memory device with improved row decoding structure
有权
高密度闪存器件具有改进的行解码结构
- 专利标题: High density flash memory device with improved row decoding structure
- 专利标题(中): 高密度闪存器件具有改进的行解码结构
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申请号: US09615176申请日: 2000-07-13
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公开(公告)号: US06233198B1公开(公告)日: 2001-05-15
- 发明人: Ki-Hwan Choi
- 申请人: Ki-Hwan Choi
- 优先权: KR99-28257 19990713
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
Disclosed herein is a flash memory device that includes an improved row decoder structure. The row decoder circuit includes a row global decoder, a row partial decoder, a row local decoder, and a block decoder. The row local decoder includes drivers corresponding to local word lines. Each of the drivers includes MOS transistors to drive a corresponding local word line with a word line voltage necessary for each of the read, program, and erase operations. Since a limited number of driver transistors are utilized, the row decoding structure utilizes a smaller area in a circuit die than conventional decoding structures.