发明授权
- 专利标题： Method of forming high dielectric constant thin film and method of manufacturing semiconductor device
- 专利标题（中）： 形成高介电常数薄膜的方法和制造半导体器件的方法
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申请号： US09444297申请日： 1999-11-22
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公开(公告)号： US06235649B1公开(公告)日： 2001-05-22
- 发明人: Takaaki Kawahara , Mikio Yamamuka , Tsuyoshi Horikawa , Masayoshi Tarutani , Takehiko Sato , Shigeru Matsuno
- 申请人： Takaaki Kawahara , Mikio Yamamuka , Tsuyoshi Horikawa , Masayoshi Tarutani , Takehiko Sato , Shigeru Matsuno
- 优先权： JP11-166205 19990614
- 主分类号： H01L21316
- IPC分类号： H01L21316
摘要：
A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.
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