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    Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby
    6.
    发明授权
    Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby 失效
    用于化学气相沉积设备的蒸发器，化学气相沉积设备和由此制造的半导体器件

    公开(公告)号：US06470144B1

    公开(公告)日：2002-10-22

    申请号：US09444556

    申请日：1999-11-19

    申请人： Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Mikio Yamamuka ,  Shigeru Matsuno ,  Takehiko Sato

    发明人： Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Mikio Yamamuka ,  Shigeru Matsuno ,  Takehiko Sato

    IPC分类号： C23C1600

    CPC分类号： C23C16/4486

    摘要： There are provided a vaporizer for use with a CVD apparatus and a CVD apparatus, capable of long-term, reliable and efficient production of CVD film with good properties, and a semiconductor device manufactured employing the same. The vaporizer for use with a CVD apparatus is comprised of a material introducing tube, a vaporization chamber and a cooling member. The material introducing tube transports a mixture containing a solution of a material for the CVD film and a gas carrying the solution. The vaporization chamber is connected to the material introducing tube to vaporize the material introduced through the material introducing tube. The cooling member cools that portion of the material introducing tube adjacent to the vaporization chamber.

    摘要翻译： 本发明提供一种能够长期，可靠，高效地生产具有良好性能的CVD膜的CVD设备和CVD设备使用的蒸发器，以及使用该蒸发器制造的半导体器件。 用于CVD装置的蒸发器由材料导入管，蒸发室和冷却构件组成。 材料导入管输送含有用于CVD膜的材料的溶液和携带溶液的气体的混合物。 蒸发室连接到材料导入管，以蒸发通过材料导入管引入的材料。 冷却部件冷却与蒸发室相邻的材料导入管的那部分。

    METHOD FOR ROUGHENING SUBSTRATE SURFACE, METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE
    7.
    发明申请
    METHOD FOR ROUGHENING SUBSTRATE SURFACE, METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE 审中-公开
    用于粗化基板表面的方法，制造光伏器件的方法和光电装置

    公开(公告)号：US20120097239A1

    公开(公告)日：2012-04-26

    申请号：US13378187

    申请日：2010-03-30

    申请人： Takehiko Sato ,  Kunihiko Nishimura ,  Daisuke Niinobe ,  Shuichi Hiza ,  Shigeru Matsuno

    发明人： Takehiko Sato ,  Kunihiko Nishimura ,  Daisuke Niinobe ,  Shuichi Hiza ,  Shigeru Matsuno

    IPC分类号： H01L31/0236 ,  H01L31/0232 ,  H01L31/18 ,  B29D11/00

    CPC分类号： C03C15/00 ,  C03C2218/355 ,  H01L31/02366 ,  Y02E10/50

    摘要： To include a first step of forming a protection film on a surface of a translucent substrate, a second step of exposing the surface of the translucent substrate by forming a plurality of openings arranged regularly at a certain pitch in the protection film, a third step of forming parabolic irregularities including substantially hemispherical depressions arranged substantially uniformly on the surface of the translucent substrate by performing isotropic etching by using the protection film having the openings formed as a mask and under conditions in which the protection film has resistance to the surface of the translucent substrate on which the protection film is formed, and a fourth step of removing the protection film, wherein at the fourth step, the isotropic etching is continued after formation of the parabolic irregularities to separate the protection film from the translucent substrate and round apexes of protruded portions in the parabolic irregularities.

    摘要翻译： 为了包括在半透明基板的表面上形成保护膜的第一步骤，通过在保护膜中形成以一定间距规则排列的多个开口来曝光透光性基板的表面的第二步骤，第三步骤 通过使用具有形成为掩模的开口的保护膜并且在保护膜对透光性基板的表面具有阻力的条件下进行各向同性蚀刻，形成包括基本上均匀地布置在透光性基板的表面上的基本上半球状的凹部的抛物面不规则 在其上形成保护膜的第四步骤和去除保护膜的第四步骤，其中在第四步骤中，在形成抛物线不规则物之后继续进行各向同性蚀刻，以将保护膜与透光性基板分离，并且突出部分的圆顶部 在抛物线不规则。

    CVD source material for forming an electrode, and electrode and wiring film for capacitor formed therefrom
    8.
    发明授权
    CVD source material for forming an electrode, and electrode and wiring film for capacitor formed therefrom 失效
    用于形成电极的CVD源材料，以及由其形成的用于电容器的电极和布线膜

    公开(公告)号：US06512297B2

    公开(公告)日：2003-01-28

    申请号：US09277185

    申请日：1999-03-26

    申请人： Shigeru Matsuno ,  Fusaoki Uchikawa ,  Takehiko Sato ,  Akira Yamada

    发明人： Shigeru Matsuno ,  Fusaoki Uchikawa ,  Takehiko Sato ,  Akira Yamada

    IPC分类号： C23C1600

    CPC分类号： H01L28/60 ,  C23C16/18 ,  H01L28/55

    摘要： A CVD source material which can be stably tramsported to a reactor in order to form a platinum metal, Cu, or an oxide of them as an electrode. An organometallic compound including a platinum metal (Ru, Pt, Ir, Pd, Os, Rh, Re) or Cu, is dissolved into tetrahydrofuran or a solvent containing tetrahydrofuran to obtain the CVD source material. In this material, the amount of moisture is preferably not more than 200 ppm. A film is formed by CVD employing this source material, the material is supplied stably, and the properties of the electrode film are improved. The capacitance property of the film is improved. Wiring of an electrical device may be formed by employing source material.

    摘要翻译： 可以将CVD源材料稳定地传送到反应器以形成铂金属Cu或其氧化物作为电极。 将包含铂金属（Ru，Pt，Ir，Pd，Os，Rh，Re）或Cu的有机金属化合物溶解在四氢呋喃或含有四氢呋喃的溶剂中，得到CVD源材料。 在该材料中，水分的含量优选为200ppm以下。 通过使用该源材料的CVD形成膜，稳定地供给材料，并提高电极膜的性能。 膜的电容性能得到改善。 可以通过使用源材料来形成电气装置的布线。

    Method for roughening substrate surface and method for manufacturing photovoltaic device
    9.
    发明授权
    Method for roughening substrate surface and method for manufacturing photovoltaic device 失效
    粗糙化基板表面的方法和制造光伏器件的方法

    公开(公告)号：US08652869B2

    公开(公告)日：2014-02-18

    申请号：US13256771

    申请日：2009-08-27

    申请人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

    发明人： Kunihiko Nishimura ,  Shigeru Matsuno ,  Daisuke Niinobe

    IPC分类号： H01L21/302

    CPC分类号： H01L31/02363 ,  H01L31/068 ,  Y02E10/547

    摘要： A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

    摘要翻译： 粗糙化基板表面的方法包括在形成在半导体基板的表面上的保护膜中形成开口，利用该保护膜作为掩模，使用酸溶液进行第一蚀刻处理，以形成第一凹部 开口及其附近区域，通过使用保护膜作为掩模进行蚀刻处理，以除去形成在第一凹部的表面上的氧化膜，通过使用保护膜作为掩模进行各向异性蚀刻，以形成 在开口及其附近区域的第二凹部，并且去除保护膜。