公开(公告)号：US07397094B2

公开(公告)日：2008-07-08

申请号：US11114195

申请日：2005-04-26

申请人： Toshihide Nabatame ,  Akira Toriumi ,  Tsuyoshi Horikawa ,  Kunihiko Iwamoto ,  Koji Tominaga

发明人： Toshihide Nabatame ,  Akira Toriumi ,  Tsuyoshi Horikawa ,  Kunihiko Iwamoto ,  Koji Tominaga

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/517 ,  H01L21/28194 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/7833

摘要： To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.

摘要翻译： 为了提供能够抑制MISFET的栅极绝缘膜的缺陷密度的半导体器件，获得足够的电特性，并使栅极绝缘膜的等效氧化物厚度（EOT）为1.0nm以下。 MISFET形成为具有形成在硅衬底的主表面上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜包括由金属氧化物层形成的金属硅酸盐层和硅 氧化物层和金属硅酸盐层形成为具有从硅衬底侧到栅电极侧的金属和硅的浓度梯度。

公开(公告)号：US06273957B1

公开(公告)日：2001-08-14

申请号：US09532446

申请日：2000-03-23

申请人： Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Fusaoki Uchikawa ,  Shigeru Matsuno ,  Takehiko Sato ,  Akira Yamada ,  Masayoshi Tarutani

发明人： Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Fusaoki Uchikawa ,  Shigeru Matsuno ,  Takehiko Sato ,  Akira Yamada ,  Masayoshi Tarutani

IPC分类号： C23C1600

CPC分类号： C23C16/4486

摘要： A vaporizing device for chemical vapor deposition (CVD) source materials includes a vaporizer for vaporizing introduced CVD source materials by heating, a spray nozzle of which an end portion is fixedly attached to the vaporizer for spraying the CVD source materials into the vaporizer, a cooling mechanism for cooling the spray nozzle, and a heat conduction restrictor attached to the end portion, proximate of the end portion, or to the vaporizer. Generation of non-vaporized residues and particles is decreased, improving productivity owing to prolongation of continuous operation time of the apparatus and a decrease in film defects.

摘要翻译： 用于化学气相沉积（CVD）源材料的蒸发装置包括用于通过加热蒸发引入的CVD源材料的蒸发器，将其端部固定地附接到蒸发器的喷嘴，用于将CVD源材料喷射到蒸发器中， 用于冷却喷嘴的机构，以及附接到端部附近的端部部分或蒸发器的导热限制器。 不蒸发残留物和颗粒的产生减少，由于设备的连续操作时间的延长以及膜缺陷的减少而提高了生产率。

公开(公告)号：US6165556A

公开(公告)日：2000-12-26

申请号：US435492

申请日：1999-11-08

申请人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tetsuro Makita ,  Tsuyoshi Horikawa ,  Akimasa Yuuki ,  Teruo Shibano

发明人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tetsuro Makita ,  Tsuyoshi Horikawa ,  Akimasa Yuuki ,  Teruo Shibano

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

CPC分类号： H01L28/56 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/52 ,  C23C16/56 ,  H01L21/31691 ,  H01L28/55 ,  Y10S427/101

摘要： There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

公开(公告)号：US6110291A

公开(公告)日：2000-08-29

申请号：US689313

申请日：1996-08-07

申请人： Kenyu Haruta ,  Koichi Ono ,  Hitoshi Wakata ,  Mutsumi Tsuda ,  Yoshio Saito ,  Keisuke Nanba ,  Kazuyoshi Kojima ,  Tetsuya Takami ,  Akihiro Suzuki ,  Tomohiro Sasagawa ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa ,  Yasuji Matsui ,  Akimasa Yuki ,  Takaaki Kawahara ,  Hideki Yabe ,  Taisuke Furukawa ,  Kouji Kise ,  Noboru Mikami ,  Tsuyoshi Horikawa ,  Tetsuo Makita ,  Kazuo Kuramoto ,  Naohiko Fujino ,  Hiroshi Kuroki ,  Tetsuo Ogama ,  Junji Tanimura

发明人： Kenyu Haruta ,  Koichi Ono ,  Hitoshi Wakata ,  Mutsumi Tsuda ,  Yoshio Saito ,  Keisuke Nanba ,  Kazuyoshi Kojima ,  Tetsuya Takami ,  Akihiro Suzuki ,  Tomohiro Sasagawa ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa ,  Yasuji Matsui ,  Akimasa Yuki ,  Takaaki Kawahara ,  Hideki Yabe ,  Taisuke Furukawa ,  Kouji Kise ,  Noboru Mikami ,  Tsuyoshi Horikawa ,  Tetsuo Makita ,  Kazuo Kuramoto ,  Naohiko Fujino ,  Hiroshi Kuroki ,  Tetsuo Ogama ,  Junji Tanimura

IPC分类号： C23C14/02 ,  C23C14/08 ,  C23C14/22 ,  C23C14/28 ,  C23C14/34 ,  C23C14/54 ,  C23C14/56 ,  C23C14/00

CPC分类号： C23C14/087 ,  C23C14/022 ,  C23C14/22 ,  C23C14/28 ,  C23C14/3471 ,  C23C14/54 ,  C23C14/541 ,  C23C14/547 ,  C23C14/564 ,  Y10S505/732

摘要： A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

公开(公告)号：US6049103A

公开(公告)日：2000-04-11

申请号：US620606

申请日：1996-03-22

申请人： Tsuyoshi Horikawa ,  Yoshikazu Tsunemine ,  Takeharu Kuroiwa ,  Tetsuro Makita ,  Noboru Mikami

发明人： Tsuyoshi Horikawa ,  Yoshikazu Tsunemine ,  Takeharu Kuroiwa ,  Tetsuro Makita ,  Noboru Mikami

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/1085 ,  H01L28/55

摘要： A thin film capacitor structure of a random access memory includes plurality of capacitors formed on an interlayer insulating film. The capacitor structure includes a plurality of lower electrodes formed on the interlayer insulating film, a first dielectric film formed over the plurality of lower electrodes and portions of the interlayer insulating film between lower electrodes, a second dielectric film formed on the first dielectric film, and an upper electrode formed on the second dielectric layer. A silicon oxide film is formed at the step portions of the first dielectric film which result at the periphery of the lower electrodes to prevent leakage current between adjacent capacitors.

摘要翻译： 随机存取存储器的薄膜电容器结构包括形成在层间绝缘膜上的多个电容器。 电容器结构包括形成在层间绝缘膜上的多个下电极，形成在多个下电极上的第一电介质膜和下电极之间的层间绝缘膜的部分，形成在第一电介质膜上的第二电介质膜，以及 形成在第二介电层上的上电极。 在第一电介质膜的台阶部分形成氧化硅膜，导致下部电极的周围，以防止相邻电容器之间的漏电流。

公开(公告)号：US20050236675A1

公开(公告)日：2005-10-27

申请号：US11114195

申请日：2005-04-26

申请人： Toshihide Nabatame ,  Akira Toriumi ,  Tsuyoshi Horikawa ,  Kunihiko Iwamoto ,  Koji Tominaga

发明人： Toshihide Nabatame ,  Akira Toriumi ,  Tsuyoshi Horikawa ,  Kunihiko Iwamoto ,  Koji Tominaga

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L29/517 ,  H01L21/28194 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/7833

摘要： To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.

摘要翻译： 为了提供能够抑制MISFET的栅极绝缘膜的缺陷密度的半导体器件，获得足够的电特性，并使栅极绝缘膜的等效氧化物厚度（EOT）为1.0nm以下。 MISFET形成为具有形成在硅衬底的主表面上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜包括由金属氧化物层形成的金属硅酸盐层和硅 氧化物层和金属硅酸盐层形成为具有从硅衬底侧到栅电极侧的金属和硅的浓度梯度。

公开(公告)号：US06563182B2

公开(公告)日：2003-05-13

申请号：US09954021

申请日：2001-09-18

申请人： Tsuyoshi Horikawa

发明人： Tsuyoshi Horikawa

IPC分类号： H01L31119

CPC分类号： H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518

摘要： Second insulating films of gate insulating films each are composed of a high-permittivity dielectric film having a relative dielectric constant of 8 or more and at least one of the high-permittivity dielectric films constituting the second insulating films is doped with at least one kind of impurity metal ions. The valence number of the impurity metal ions differs by 1 from that of metal ions constituting the high-permittivity dielectric films. Due to this doping, at least one of the density and polarity of charged defects in the high-permittivity dielectric films differs between the second insulating films. The threshold voltage of each MISFET is controlled independently.

公开(公告)号：US6110283A

公开(公告)日：2000-08-29

申请号：US912938

申请日：1997-08-15

申请人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa

发明人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4481 ,  C23C16/448

摘要： A chemical vapor deposition apparatus to reduce generation of contaminants such as residues within the apparatus can be obtained. The chemical vapor deposition apparatus includes a CVD source container, a vaporizer and reaction unit. The vaporizer has a nozzle attached thereto. The nozzle has a tip portion and a thick portion. The reaction unit includes a mixing unit. The mixing unit includes an oxidizer supply pipe as well as a heating portion having a helical side groove and heating means. Reaction unit further includes a reaction chamber surrounded by a wall surface. The inside of the wall surface is covered with an inactive cover layer, and the wall surface is heated to a temperature range of 300-500.degree. C.

摘要翻译： 可以获得化学气相沉积装置，以减少装置内残留物等杂质的产生。 化学气相沉积装置包括CVD源容器，蒸发器和反应单元。 蒸发器具有附接到其上的喷嘴。 喷嘴具有尖端部分和较厚部分。 反应单元包括混合单元。 混合单元包括氧化剂供应管以及具有螺旋侧槽和加热装置的加热部分。 反应单元还包括由壁表面包围的反应室。 壁面内侧覆盖有不活泼的覆盖层，壁面被加热至300-500℃的温度范围。

公开(公告)号：US5281806A

公开(公告)日：1994-01-25

申请号：US50673

申请日：1993-04-22

申请人： Kazuro Nishi ,  Hajime Nakajima ,  Masaya Mizunuma ,  Tatsuo Masumi ,  Shigeyuki Kaho ,  Tsuyoshi Horikawa ,  Shin Tahata

发明人： Kazuro Nishi ,  Hajime Nakajima ,  Masaya Mizunuma ,  Tatsuo Masumi ,  Shigeyuki Kaho ,  Tsuyoshi Horikawa ,  Shin Tahata

IPC分类号： G02F1/135 ,  G09G3/02 ,  H04N5/74 ,  H01J40/14

CPC分类号： G02F1/135 ,  G02F1/1354 ,  G09G3/02 ,  H04N5/7441 ,  G09G2310/061 ,  G09G2360/141 ,  G09G3/36

摘要： A liquid crystal light valve has a photoconductive layer between a pair of electrodes, and a liquid crystal layer. The resistivity of the photoconductive layer at the portion which is irradiated with light is reduced by partial light irradiation. By applying a voltage between the electrodes in this state, the voltage is applied to the liquid crystal layer in the portion which is irradiated with light and the crystalline structure at this portion is changed, thereby enabling image data writing. The photoconductive layer is a laminate of an amorphous Si film and an inorganic insulating film disposed on the electrode side, which structure suppresses the carrier injection from the electrode to the amorphous Si film. The polarity of a voltage for writing image data into the liquid crystal light valve is inverted for every horizontal scanning operation. That is, writing of black portions on a white background and writing of white portions on a black background are alternately executed. It is therefore possible to write data on one line and erase the data on the next line by a voltage of one polarity. By periodically setting a period in which no voltage is applied during writing, writing error caused by stored charges is prevented.

摘要翻译： 液晶光阀在一对电极和液晶层之间具有光电导层。 通过部分光照射，光照射部分的光电导层的电阻率降低。 通过在这种状态下在电极之间施加电压，将电压施加到被照射的部分中的液晶层，并且该部分的晶体结构发生变化，从而使图像数据写入。 光电导层是设置在电极侧的非晶Si膜和无机绝缘膜的层叠体，该结构抑制从电极向非晶Si膜的载流子注入。 对于每次水平扫描操作，将图像数据写入液晶光阀的电压的极性反转。 也就是说，交替地执行在白色背景上写入黑色部分并在黑色背景上写入白色部分。 因此，可以在一行上写入数据，并通过一个极性的电压擦除下一行的数据。 通过周期性地设定在写入期间不施加电压的周期，防止由存储的电荷引起的写入错误。

公开(公告)号：US08351805B2

公开(公告)日：2013-01-08

申请号：US12711728

申请日：2010-02-24

申请人： Tsutomu Nakaminato ,  Tsuyoshi Horikawa

发明人： Tsutomu Nakaminato ,  Tsuyoshi Horikawa

IPC分类号： G03G15/00

CPC分类号： H04N1/00891 ,  G03G15/5004 ,  H04N1/00885 ,  H04N1/00904

摘要： A power saving processing apparatus that includes a processing unit, an output unit and a transition unit is provided. The processing unit is configured to transition from a first state where power is supplied to a second state where power supply is restricted, executes a first process required for such transition before transition from the first state to the second state, and executes a second process to output a first signal after executing the first process. The output unit outputs a second signal after receiving the first signal output from the processing unit, and outputs the second signal when not receiving the first signal output from the processing unit within a predetermined time period after a predetermined time after the first process starts. The transition unit transitions the processing unit to the second state after receiving the second signal output from the output unit.

摘要翻译： 提供一种包括处理单元，输出单元和转移单元的省电处理设备。 处理单元被配置为从供电受限的第一状态转换到电源受限的第二状态，在从第一状态转换到第二状态之前执行这种转换所需的第一处理，并执行第二处理 在执行第一处理之后输出第一信号。 输出单元在接收到从处理单元输出的第一信号之后输出第二信号，并且在第一处理开始之后的预定时间之后的预定时间段内未接收到从处理单元输出的第一信号时输出第二信号。 在接收到从输出单元输出的第二信号之后，转换单元将处理单元转换到第二状态。