- 专利标题： Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
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申请号： US09298056申请日： 1999-04-22
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公开(公告)号： US06238586B1公开(公告)日： 2001-05-29
- 发明人: Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
- 申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
- 优先权： JP3-042212 19910215; JP3-042213 19910215; JP3-055601 19910228; JP3-055602 19910228; JP3-055603 19910228; JP3-055604 19910228; JP3-055605 19910228; JP3-055606 19910228; JP3-055607 19910228; JP3-055608 19910228; JP3-055609 19910228; JP3-055610 19910228; JP3-055611 19910228; JP3-055612 19910228; JP3-055613 19910228; JP3-055614 19910228; JP3-085755 19910327; JP3-148160 19910524; JP3-148161 19910524; JP3-148163 19910524; JP3-148164 19910524; JP3-149297 19910527; JP3-149298 19910527; JP3-149299 19910527; JP3-149300 19910527; JP3-149301 19910527; JP3-149302 19910527; JP3-149306 19910527; JP3-149307 19910527; JP3-149308 19910527; JP3-149309 19910527; JP3-149310 19910527; JP3-149311 19910527; JP3-150922 19910528; JP3-150980 19910528; JP3-150981 19910528; JP3-150982 19910528; JP3-150983 19910528; JP3-150984 19910528; JP3-150985 19910528; JP3-150989 19910528; JP3-150990 19910528; JP3-150991 19910528; JP3-150993 19910528; JP3-150994 19910528; JP3-152248 19910529; JP3-152249 19910529; JP3-152250 19910529; JP3-152251 19910529
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.