A method and apparatus are provided for switching in metal insulator metal (MIM) capacitors and field effect transistor (FET) tuning capacitors for oscillator circuits. Apparatus for switching in metal-insulator-metal (MIM) capacitors and field effect transistor (FET) tuning capacitors for oscillator circuits includes a first differential oscillator node and a second differential oscillator node. A plurality of metal-insulator-metal (MIM) capacitors are connected to the first differential oscillator nodes and a plurality of metal-insulator-metal (MIM) capacitors are connected to the second differential oscillator nodes. A respective switching transistor is connected in series with an associated one of the metal-insulator-metal (MIM) capacitors. Each switching transistor receives a decoding input and is arranged for providing an open or a ground connection for the associated one of the metal-insulator-metal (MIM) capacitors. A first field effect transistor (FET) tuning capacitor has a gate connected to the first differential oscillator node. A second field effect transistor (FET) tuning capacitor has a gate connected to the second differential oscillator node. Each of the first field effect transistor (FET) tuning capacitor and the second field effect transistor (FET) tuning capacitor having a source and a drain connected together and a control voltage applied to the connected source and drain for varying tuning capacitance.