发明授权
- 专利标题: Method for removing photoresist and plasma etch residues
- 专利标题(中): 去除光刻胶和等离子蚀刻残留物的方法
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申请号: US09055630申请日: 1998-04-06
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公开(公告)号: US06245155B1公开(公告)日: 2001-06-12
- 发明人: Vincent G. Leon , Kenji Honda , Eugene F. Rothgery
- 申请人: Vincent G. Leon , Kenji Honda , Eugene F. Rothgery
- 主分类号: C23G102
- IPC分类号: C23G102
摘要:
A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant.
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