发明授权
US06245155B1 Method for removing photoresist and plasma etch residues 失效
去除光刻胶和等离子蚀刻残留物的方法

Method for removing photoresist and plasma etch residues
摘要:
A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant.
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