发明授权
- 专利标题： Method of forming tungsten silicide film
- 专利标题（中）： 形成硅化钨膜的方法
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申请号： US09385848申请日： 1999-08-30
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公开(公告)号： US06245673B1公开(公告)日： 2001-06-12
- 发明人: Kazuya Okubo , Tsuyoshi Takahashi , Kimiya Aoki , Kimihiro Matsuse
- 申请人： Kazuya Okubo , Tsuyoshi Takahashi , Kimiya Aoki , Kimihiro Matsuse
- 优先权： JP10-262307 19980901; JP11-105946 19990413
- 主分类号： H01L213205
- IPC分类号： H01L213205
摘要：
A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.
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