发明授权
US06249406B1 Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction 失效
具有高磁化强度,高电阻率,低固有各向异性和近零磁致伸缩的软相邻层的磁阻传感器

  • 专利标题: Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction
  • 专利标题(中): 具有高磁化强度,高电阻率,低固有各向异性和近零磁致伸缩的软相邻层的磁阻传感器
  • 申请号: US08717518
    申请日: 1996-09-23
  • 公开(公告)号: US06249406B1
    公开(公告)日: 2001-06-19
  • 发明人: Hardayal Singh GillMustafa Pinarbasi
  • 申请人: Hardayal Singh GillMustafa Pinarbasi
  • 主分类号: G11B5127
  • IPC分类号: G11B5127
Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction
摘要:
A high magnetization, high resistivity, low corrosion and near zero magnetostriction soft adjacent layer (SAL) is provided for a magnetoresistive (MR) sensor of a read head. The MR sensor may either be an anisotropic MR (AMR) sensor or a spin valve sensor. In both sensors the SAL is CoHfNb or CoHfNbFe. The Hf is added to reduce corrosion and the Hf and Nb are balanced to provide near zero magnetostriction. The addition of Fe is an enhancer for reducing negative magnetostriction without diluting the magnetism of the alloy. Since CoHfNb has significantly higher magnetization than NiFeCr the SAL layer of CoHfNb can be thinner than the SAL of NiFeCr which results in a significantly higher resistance SAL. The higher resistance SAL equates to less shunting of the sense current through the SAL and better signal performance of the MR read head.
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