发明授权
US06251798B1 Formation of air gap structures for inter-metal dielectric application
有权
用于金属间电介质应用的气隙结构的形成
- 专利标题： Formation of air gap structures for inter-metal dielectric application
- 专利标题（中）： 用于金属间电介质应用的气隙结构的形成
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申请号： US09359894申请日： 1999-07-26
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公开(公告)号： US06251798B1公开(公告)日： 2001-06-26
- 发明人: Choi Pheng Soo , Kheng Chok Tee , Kok Keng Ong , Lap Chan
- 申请人： Choi Pheng Soo , Kheng Chok Tee , Kok Keng Ong , Lap Chan
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
A method for the formation of an air gap structure for use in inter-metal applications. A metal pattern of metal lines is formed, a layer of Plasma Polymerized Methylsilane (PPMS) resist is deposited on top of this pattern. The surface of the PPMS resist is subjected to selective exposure. The unexposed PPMS is removed after which the process is completed by closing up the openings within the PPMS.
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