发明授权
- 专利标题： Increased cycle specification for floating-gate and method of manufacture thereof
- 专利标题（中）： 增加浮栅的循环规范及其制造方法
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申请号： US08848114申请日： 1997-04-28
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公开(公告)号： US06252270B1公开(公告)日： 2001-06-26
- 发明人: Richard W. Gregor , Isik C. Kizilyalli , Ranbir Singh
- 申请人： Richard W. Gregor , Isik C. Kizilyalli , Ranbir Singh
- 主分类号： H01L29788
- IPC分类号： H01L29788
摘要：
A programmable semiconductor device and a method of manufacturing the same. The device includes: (1) a substrate composed at least in part of silicon, (2) a dielectric layer located over the substrate and (3) a control gate located over the dielectric layer wherein the dielectric layer contains a substantial concentration of an isotope of hydrogen.
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