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132 条记录 (耗时 0.022 秒)

    Multi-layered metal silicide resistor for Si Ic's
    5.
    发明授权
    Multi-layered metal silicide resistor for Si Ic's 有权
    Si Ic的多层金属硅化物电阻

    公开(公告)号：US06359339B1

    公开(公告)日：2002-03-19

    申请号：US09480224

    申请日：2000-01-10

    申请人： Richard W. Gregor ,  Isik C. Kizilyalli ,  Sailesh M. Merchant ,  Jaseph R. Radosevich ,  Pradip K. Roy

    发明人： Richard W. Gregor ,  Isik C. Kizilyalli ,  Sailesh M. Merchant ,  Jaseph R. Radosevich ,  Pradip K. Roy

    IPC分类号： H01L2348

    CPC分类号： H01L28/24 ,  H01L27/0802

    摘要： The present invention provides a unique a resistor formed on a semiconductor substrate. The resistor preferably comprises a first resistor layer that includes a first metal silicide, such as tungsten silicide, and nitrogen and that is formed on the substrate. The first layer has a first thickness and a concentration of nitrogen incorporated therein. The nitrogen concentration may be varied to obtain a desired resistive value of the resistor. Thus, depending on the concentration of nitrogen, a wide range of resistive values may be achieved. The resistor further comprises a second resistor layer with a second thickness that includes a second metal silicide and that is formed on the first resistor layer. Thus, the present invention provides a metal silicide-based resistor having nitrogen incorporated therein which allows the resistance of the resistor to be tailored to specific electrical applications. Yet at the same time, the resistor is far less susceptible to temperature and voltage variation than conventional diffused resistors and, thereby, provides a more precise resistor.

    摘要翻译： 本发明提供了形成在半导体衬底上的独特的电阻器。 电阻器优选地包括第一电阻层，该第一电阻层包括第一金属硅化物，例如硅化钨和氮，并且形成在衬底上。 第一层具有掺入其中的第一厚度和氮浓度。 可以改变氮浓度以获得电阻器的期望电阻值。 因此，取决于氮的浓度，可以实现宽范围的电阻值。 电阻器还包括具有第二厚度的第二电阻层，该第二电阻层包括第二金属硅化物，并形成在第一电阻层上。 因此，本发明提供一种其中结合有氮化物的金属硅化物基电阻器，其允许将电阻器的电阻定制为特定的电气应用。 然而与此同时，电阻器比常规扩散电阻器更不易受温度和电压变化的影响，从而提供更精确的电阻器。

    Method and system for a GAN vertical JFET utilizing a regrown gate
    8.
    发明授权
    Method and system for a GAN vertical JFET utilizing a regrown gate 有权
    使用再生栅的GAN垂直JFET的方法和系统

    公开(公告)号：US09184305B2

    公开(公告)日：2015-11-10

    申请号：US13198655

    申请日：2011-08-04

    申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

    IPC分类号： H01L21/337 ,  H01L29/808 ,  H01L29/10 ,  H01L29/66 ,  H01L29/20

    CPC分类号： H01L29/8083 ,  H01L29/1066 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924

    摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿着垂直方向。

    Ingan ohmic source contacts for vertical power devices
    10.
    发明授权
    Ingan ohmic source contacts for vertical power devices 有权
    用于垂直功率器件的Ingan欧姆源触点

    公开(公告)号：US09006800B2

    公开(公告)日：2015-04-14

    申请号：US13326192

    申请日：2011-12-14

    申请人： Linda Romano ,  Andrew Edwards ,  Dave P. Bour ,  Isik C. Kizilyalli

    发明人： Linda Romano ,  Andrew Edwards ,  Dave P. Bour ,  Isik C. Kizilyalli

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/45 ,  H01L29/808 ,  H01L29/10

    CPC分类号： H01L29/66916 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/452 ,  H01L29/66924 ,  H01L29/8083

    摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译： 垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极。 源包括耦合到InGaN层的GaN层。 沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿垂直方向。