发明授权
US06252894B1 Semiconductor laser using gallium nitride series compound semiconductor
有权
半导体激光器采用氮化镓系列化合物半导体
- 专利标题: Semiconductor laser using gallium nitride series compound semiconductor
- 专利标题(中): 半导体激光器采用氮化镓系列化合物半导体
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申请号: US09263213申请日: 1999-03-05
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公开(公告)号: US06252894B1公开(公告)日: 2001-06-26
- 发明人: Katsunobu Sasanuma , Shinji Saito , Genichi Hatakoshi , Kazuhiko Itaya , Masaaki Onomura , Risa Sugiura , Mikio Nakasuji , Hidetoshi Fujimoto , Masahiro Yamamoto , Shinya Nunoue
- 申请人: Katsunobu Sasanuma , Shinji Saito , Genichi Hatakoshi , Kazuhiko Itaya , Masaaki Onomura , Risa Sugiura , Mikio Nakasuji , Hidetoshi Fujimoto , Masahiro Yamamoto , Shinya Nunoue
- 优先权: JP10-053353 19980305
- 主分类号: H01S500
- IPC分类号: H01S500
摘要:
A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.