发明授权
- 专利标题： Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
- 专利标题（中）： 磁阻效应器件，磁阻效应型头，存储器件和使用其的放大器件
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申请号： US09612805申请日： 2000-07-10
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公开(公告)号： US06256222B1公开(公告)日： 2001-07-03
- 发明人: Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
- 申请人： Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
- 优先权： JP6-03257 19940502; JP6-125072 19940607; JP6-149229 19940630; JP6-176822 19940728; JP6-178078 19940729; JP6-187484 19940809; JP6-190457 19940812; JP6-303615 19941207; JP6-313147 19941216; JP7-51630 19950310; JP7-53067 19950313
- 主分类号： G11C1100
- IPC分类号： G11C1100
摘要：
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.