摘要:
A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.
摘要:
A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.
摘要:
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要:
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要:
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要:
A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film to provide a window for excitation light is arranged on a substrate via a buffer layer. Another semiconductor film and a nonmagnetic metallic film (or a nonmagnetic insulating film) are arranged on the semiconductor film successively. A magnetic film having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film). An electrode is arranged beneath the substrate and another electrode is arranged on the magnetic film. By radiating a laser light beam to the semiconductor film acting as a window, electrons having spin polarization are excited in the semiconductor film so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.
摘要:
A high performance thin film memory device uses an artificial lattice magnetoresistance effect film, and operable with a low magnetic field and room temperature; and the device has a magnetic film part M, current feed lines R and R' for generating magnetic field for information data writing-in, and an information data readout line S of an artificial lattice magnetoresistance film of a lamination structure of a metallic magnetic thin layers such as Ni--Fe--Co system and a metallic nonmagnetic thin layers such as Cu.
摘要:
A magnetoresistance element has a structure of a magnetic film 3, a nonmagnetic film 2 and a magnetic film 1 layered successively, and the nonmagnetic film is made of a mixture of electrical conductors and insulators. Then, magnetic coupling between the magnetic films 1 and 3 is reduced. Further, because it is possible to detect a magnetic field by supplying a current along a film plane, a large change in magnetoresistance is observed, or the sensitivity is high. Modified magnetoresistance elements are also described including a film 4 suppressing magnetization reversal or an interface magnetic film 5. A magnetic head for a hard disk is produced by adding a yoke to the magnetoresistance element. A memory device having a plurality of magnetoresistance elements is produced by adding word lines and the like thereto.
摘要:
A cleaning effect is improved by cleaning a component that has a recess structure by using a cleaning medium of a liquefied gas or a supercritical fluid. By the cleaning method of removing adhering substances adhering to at least the surface of the recess structure of the component that has the recess structure, cleaning is carried out by using the supercritical gas or the liquefied gas so that the cleaning medium spreads over the surface of the recess structure.
摘要:
A piezoelectric element includes: a piezoelectric film made of PZT; a pair of electrodes (a lower electrode and an upper electrode) arranged with the piezoelectric film being interposed therebetween; and a base film made of PLT having a thickness of about 50 nm to 200 nm and provided between the piezoelectric film and the lower electrode. The piezoelectric element, as a whole, is provided on a substrate, which may be a stainless steel substrate (polycrystalline), a heat-resistant glass substrate (amorphous), a silicon substrate (single crystal), etc. A piezoelectric element having a good piezoelectric characteristic can be provided on a substrate other than a single crystal substrate.