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    Thin film magnetic head
    2.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号：US06400537B2

    公开(公告)日：2002-06-04

    申请号：US09099683

    申请日：1998-06-18

    申请人： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

    发明人： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

    摘要翻译： 薄膜磁头包括在上屏蔽部分和下屏蔽部分之间的上屏蔽部分，下屏蔽部分和磁阻装置部分。 磁阻器件部分通过导电层连接到上屏蔽部分和下屏蔽部分。 电流经由上屏蔽和下屏蔽流过磁阻器件部分。

    Magnetoresistive device having a highly smooth metal reflective layer
    6.
    发明授权
    Magnetoresistive device having a highly smooth metal reflective layer 失效
    具有高度光滑的金属反射层的磁阻器件

    公开(公告)号：US06535362B2

    公开(公告)日：2003-03-18

    申请号：US08979886

    申请日：1997-11-26

    申请人： Yasuhiro Kawawake ,  Hiroshi Sakakima ,  Mitsuo Satomi

    发明人： Yasuhiro Kawawake ,  Hiroshi Sakakima ,  Mitsuo Satomi

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01L43/08

    摘要： The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.

    摘要翻译： 本发明的磁阻器件包括：通过其间的非磁性层堆积的至少两个磁性层; 以及形成为与最外两层磁性层中的至少一层接触的传导电子的金属反射层。 金属反射层与最外面的磁性层的与非磁性层接触的最外面的磁性层的另一个表面相对的一个表面接触。 金属反射层可能反射传导电子同时保持电子的自旋方向。

    Magnetoresistive element and memory element
    9.
    发明授权
    Magnetoresistive element and memory element 失效
    磁阻元件和记忆元件

    公开(公告)号：US5691936A

    公开(公告)日：1997-11-25

    申请号：US702382

    申请日：1996-08-14

    申请人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

    发明人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

    IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/42 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/15

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11C11/14 ,  G11B2005/3996

    摘要： A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film to provide a window for excitation light is arranged on a substrate via a buffer layer. Another semiconductor film and a nonmagnetic metallic film (or a nonmagnetic insulating film) are arranged on the semiconductor film successively. A magnetic film having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film). An electrode is arranged beneath the substrate and another electrode is arranged on the magnetic film. By radiating a laser light beam to the semiconductor film acting as a window, electrons having spin polarization are excited in the semiconductor film so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.

    摘要翻译： 具有磁阻小的磁阻变化的磁阻效应元件以及使用其的存储元件。 用于提供激发光的窗口的半导体膜经由缓冲层布置在衬底上。 在半导体膜上依次配置另一半导体膜和非磁性金属膜（或非磁性绝缘膜）。 具有方形磁化曲线的磁性膜被布置在非磁性金属膜（或非磁性绝缘膜）上。 电极布置在基底下方，另一电极布置在磁膜上。 通过对作为窗口的半导体膜照射激光束，在半导体膜中激发具有自旋极化的电子，以利用磁性膜表面的电子散射对磁性的磁化取向的依赖性 电子和激发电子的自旋极化状态。