发明授权
US06262931B1 Semiconductor memory device having voltage down convertor reducing current consumption
有权
具有降压转换器的半导体存储器件减少电流消耗
- 专利标题: Semiconductor memory device having voltage down convertor reducing current consumption
- 专利标题(中): 具有降压转换器的半导体存储器件减少电流消耗
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申请号: US09539893申请日: 2000-03-31
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公开(公告)号: US06262931B1公开(公告)日: 2001-07-17
- 发明人: Takashi Kono , Kiyohiro Furutani , Takeshi Hamamoto , Katsuyoshi Mitsui
- 申请人: Takashi Kono , Kiyohiro Furutani , Takeshi Hamamoto , Katsuyoshi Mitsui
- 优先权: JP11-245053 19990831
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
A control circuit & mode register outputs a signal responsive to each command to a VDC control circuit. The VDC control circuit outputs a signal PWRUP changing the quantity of a through current Ic of a comparator stored in a VDC in response to the command. The VDC control circuit internally generates a signal of which pulse width corresponds to a prescribed delay time, in response to input of the command. Therefore, activation of each bank may not be monitored but current consumption can be reduced by preferably controlling a power supply current while minimizing the number of delay circuits and wires.
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