发明授权
US06268755B1 MOSFET predrive circuit with independent control of the output voltage rise and fall time, with improved latch immunity
失效
MOSFET预驱动电路具有独立的输出电压上升和下降时间控制，具有提高的锁存抗扰度
- 专利标题： MOSFET predrive circuit with independent control of the output voltage rise and fall time, with improved latch immunity
- 专利标题（中）： MOSFET预驱动电路具有独立的输出电压上升和下降时间控制，具有提高的锁存抗扰度
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申请号： US08963836申请日： 1997-11-04
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公开(公告)号： US06268755B1公开(公告)日： 2001-07-31
- 发明人: R. Travis Summerlin , Joseph A. Devore , William E. Grose
- 申请人： R. Travis Summerlin , Joseph A. Devore , William E. Grose
- 主分类号： H03K190185
- IPC分类号： H03K190185
摘要：
A voltage level shifting circuit (60) and method for accomplishing a voltage level change includes a voltage level shifting circuit (65) to change an input voltage to a shifted voltage level. A second stage (67) is connected between a voltage source at the shifted voltage level (68) and the reference potential. The second stage (67) includes active devices (66,82) that are controlled by the voltage level shifting circuit (65). The second stage (67) also includes slope resistors (86,88) connected in series between the active devices (66,82) of the second stage (67).
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