发明授权
- 专利标题： Semiconductor with polymeric layer
- 专利标题（中）： 半导体与聚合物层
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申请号： US09282788申请日： 1999-03-31
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公开(公告)号： US06271107B1公开(公告)日： 2001-08-07
- 发明人: Thomas Massingill , Mark Thomas McCormack , Hunt Hang Jiang
- 申请人： Thomas Massingill , Mark Thomas McCormack , Hunt Hang Jiang
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
Bumped semiconductor substrates and methods for forming bumped semiconductor substrates are disclosed. The bumped semiconductor substrates have a polymeric layer, which can serve as a passivation layer for chips derived from the semiconductor substrate.