Invention Grant
- Patent Title: Substrate support for plasma processing
- Patent Title (中): 基板支持等离子体处理
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Application No.: US32902099Application Date: 1999-06-09
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Publication No.: US6273958B2Publication Date: 2001-08-14
- Inventor: SHAMOUILIAN SHAMOUIL , KUMAR ANANDA H , SALIMIAN SIAMAK , DAHIMENE MAHMOUD , CHAFIN MICHAEL G , GRIMARD DENNIS S
- Applicant: APPLIED MATERIALS INC
- Priority: US32902099 1999-06-09
- Main IPC: C23C16/458
- IPC: C23C16/458 ; H01J37/32 ; H01L21/00 ; H01L21/02 ; H01L21/302 ; H01L21/3065 ; H01L21/683 ; C23C16/00 ; H05H1/00

Abstract:
A support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 adapted to receive a substrate 25 and a conduit 160 that extends through the dielectric 60. The thickness of a portion of the dielectric 60 between an edge 195 of the primary electrode 70 and a surface 180 of the conduit 160 is sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of gas in the chamber 30 during processing of the substrate 25.
Information query
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