公开(公告)号：US6273958B2

公开(公告)日：2001-08-14

申请号：US32902099

申请日：1999-06-09

Applicant: APPLIED MATERIALS INC

Inventor： SHAMOUILIAN SHAMOUIL ,  KUMAR ANANDA H ,  SALIMIAN SIAMAK ,  DAHIMENE MAHMOUD ,  CHAFIN MICHAEL G ,  GRIMARD DENNIS S

IPC: C23C16/458 ,  H01J37/32 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  C23C16/00 ,  H05H1/00

CPC classification number: H01L21/67069 ,  H01J37/32559 ,  H01J37/32697 ,  H01J2237/2007 ,  H01L21/6831

Abstract: A support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 adapted to receive a substrate 25 and a conduit 160 that extends through the dielectric 60. The thickness of a portion of the dielectric 60 between an edge 195 of the primary electrode 70 and a surface 180 of the conduit 160 is sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of gas in the chamber 30 during processing of the substrate 25.

Abstract translation: 支撑件55包括覆盖主电极70的电介质60，电介质60具有适于接纳基底25的表面75和延伸穿过电介质60的导管160.电介质60的一部分的厚度在边缘195 的主电极70和导管160的表面180足够大以减小当通过RF电压对初级电极70充电以在处理期间在室30中形成气体等离子体时在管道160中的等离子体形成的入射 的基板25。