发明授权
- 专利标题: Method for cleaning semiconductor device
- 专利标题(中): 半导体器件清洗方法
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申请号: US09541612申请日: 2000-04-03
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公开(公告)号: US06277767B1公开(公告)日: 2001-08-21
- 发明人: Yoshimi Shiramizu , Mitsuaki Mitama
- 申请人: Yoshimi Shiramizu , Mitsuaki Mitama
- 优先权: JP11-099141 19990406
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
It is an object of the present invention to provide a cleaning method of and a cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film. The present invention provides a method of cleaning a semiconductor substrate, which comprises irradiating a semiconductor substrate contaminated by organic matters such as phthalic acid, phthalate and derivatives thereof with vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.
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