公开(公告)号：US07348188B2

公开(公告)日：2008-03-25

申请号：US11070096

申请日：2005-03-03

申请人： Yoshimi Shiramizu

发明人： Yoshimi Shiramizu

IPC分类号： H01L21/00

CPC分类号： G01N1/4044 ,  G01N1/32 ,  G01N23/223 ,  G01N2223/076 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various kinds of metal elements existing on the surface of a wafer are analyzed with higher sensitivity. A high concentration HF solution is dropped onto a surface of a wafer. By providing the droplets of high concentration HF solution, the native oxide film on the surface of the wafer is dissolved into the solution, and the metal elements or compounds thereof existing in vicinity of the surface of the wafer are eliminated from the wafer and are incorporated into the high concentration HF solution. The droplets formed by agglomerating the high concentration HF solution are aggregated at a predetermined position on the surface of the wafer. Then, the recovered droplet of the high concentration HF solution is dried. The aggregated material is irradiated with X-ray at an angle for promoting total reflection, and the total reflection X-ray fluorescence spectrometry is conducted to detect the emitted X-ray.

摘要翻译： 以更高的灵敏度分析存在于晶片表面上的各种金属元素。 将高浓度的HF溶液滴到晶片的表面上。 通过提供高浓度HF溶液的液​​滴，将晶片表面上的自然氧化膜溶解到溶液中，并且将其中存在于晶片表面附近的金属元素或其化合物从晶片中排出并且被结合 进入高浓度HF溶液。 通过聚集高浓度HF溶液形成的液滴在晶片表面上的预定位置聚集。 然后，将高浓度HF溶液的回收液滴干燥。 以促进全反射的角度用X射线照射聚集的材料，进行全反射X射线荧光光谱法以检测发射的X射线。

公开(公告)号：US06726886B2

公开(公告)日：2004-04-27

申请号：US09888565

申请日：2001-06-26

申请人： Yoshimi Shiramizu ,  Mitsuaki Mitama

发明人： Yoshimi Shiramizu ,  Mitsuaki Mitama

IPC分类号： B01J1908

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  H01L21/28167 ,  Y10S438/906

摘要： A cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film includes a device for irradiating the semiconductor substrate contaminated by the organic matters. The device emits a vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

摘要翻译： 抑制自然氧化膜生长的同时沉积在半导体衬底的表面上的有机物质如邻苯二甲酸酯的清洁装置包括用于照射被有机物污染的半导体衬底的装置。 在从氧气或空气吸入口导入的氧气或空气的气氛中，该装置发射波长在165〜179nm范围内的真空紫外光，从而分解除去污染物。

公开(公告)号：US06116254A

公开(公告)日：2000-09-12

申请号：US627242

申请日：1996-04-01

申请人： Yoshimi Shiramizu

发明人： Yoshimi Shiramizu

IPC分类号： C11D7/60 ,  B08B3/08 ,  C02F1/42 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  B08B3/00

CPC分类号： H01L21/67057 ,  B08B3/08 ,  C02F1/42 ,  C02F2103/346 ,  Y10S134/902

摘要： A cleaning method for a semiconductor substrate is provided. After pure water is supplied to a cleaning tank, a chlorine gas is supplied to the pure water to thereby generate chloride ions, hypochlorite ions, chlorite ions, and chlorate ions in the pure water. Then, a semiconductor substrate is immersed into the pure water containing the chloride ions, hypochlorite ions, chlorite ions, and chlorate ions. The fabrication cost of a semiconductor device and adverse effects on the earth environment can be reduced. The concentration of the dissolved chlorine gas in the pure water is preferably in the range from 0.003 to 0.3% by weight.

摘要翻译： 提供了一种用于半导体衬底的清洁方法。 纯净水供给清洗槽后，向纯水供给氯气，在纯水中产生氯离子，次氯酸根离子，亚氯酸根离子和氯酸根离子。 然后，将半导体衬底浸入含有氯离子，次氯酸根离子，亚氯酸根离子和氯酸根离子的纯水中。 可以降低半导体器件的制造成本和对地球环境的不利影响。 纯水中溶解氯气的浓度优选为0.003〜0.3重量％。

公开(公告)号：US20050048659A1

公开(公告)日：2005-03-03

申请号：US10923794

申请日：2004-08-24

申请人： Yoshimi Shiramizu

发明人： Yoshimi Shiramizu

IPC分类号： G01N1/28 ,  H01L21/00 ,  H01L21/66 ,  G01N33/00

CPC分类号： H01L21/6715 ,  H01L21/67063

摘要： An apparatus for preparing an analytical sample of a substance, which resides on the surface of a semiconductor substrate, capable of readily preparing an analytical sample of a substance which resides on the surface of a semiconductor substrate. A recovery solution is dropped on the surface of a silicon wafer. The recovery liquid can spread over the entire surface of the silicon wafer, because the surface property of the silicon wafer having an oxide film formed thereon is hydrophilic. The substance-to-be-analyzed which resides on the surface of the silicon wafer dissolves into the recovery liquid. Next, a hydrofluoric acid vapor is sprayed onto the surface of the silicon wafer. The oxide film is decomposed by the hydrofluoric acid vapor, and this turns the surface property of the silicon wafer into hydrophobic. Upon decomposition of the oxide film, the substance-to-be-analyzed dissolves into the recovery liquid. The hydrophobicity of the silicon wafer facilitates sampling of the recovery liquid.

摘要翻译： 一种用于制备驻留在半导体衬底表面上的能够容易地制备位于半导体衬底的表面上的物质的分析样品的物质的分析样品的装置。 将回收溶液滴在硅晶片的表面上。 由于在其上形成有氧化膜的硅晶片的表面性质是亲水性的，所以回收液体可以扩散在硅晶片的整个表面上。 驻留在硅晶片表面上的待分析物质溶解在回收液中。 接下来，将氢氟酸蒸汽喷涂到硅晶片的表面上。 氧化膜由氢氟酸蒸气分解，使硅晶片的表面性质变为疏水性。 在氧化膜分解时，要分析的物质溶解回收液体。 硅晶片的疏水性促进了回收液的取样。

公开(公告)号：US5814157A

公开(公告)日：1998-09-29

申请号：US645812

申请日：1996-05-14

申请人： Tetsuo Mizuniwa ,  Yoshimi Shiramizu

发明人： Tetsuo Mizuniwa ,  Yoshimi Shiramizu

IPC分类号： C11D7/10 ,  B08B3/08 ,  C11D7/00 ,  C11D11/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  C23G1/02

CPC分类号： H01L21/02052 ,  B08B3/08 ,  C11D11/0047 ,  C11D3/3953 ,  H01L21/67057

摘要： A method for removing metallic and organic contaminations from a surface of a semiconductor wafer comprises cleaning the semiconductor wafer with a cleaning solution which contains a chlorine compound acting as an oxidant and which has a pH value in the range of 1 to 3. The cleaning solution has an oxidation-reduction potential in the range of 800 mV to 1200 mV when measured on the basis of a saturated calomel electrode at a temperature 25.degree. C.

摘要翻译： 从半导体晶片的表面去除金属和有机污染的方法包括用含有氯化合物作为氧化剂并且pH值在1至3范围内的清洗溶液清洗半导体晶片。清洗液 在饱和甘汞电极的温度25℃下测定时，氧化还原电位为800mV〜1200mV。

公开(公告)号：US5599438A

公开(公告)日：1997-02-04

申请号：US622138

申请日：1996-03-27

申请人： Yoshimi Shiramizu ,  Masaharu Nakamori ,  Hidemitsu Aoki ,  Hirofumi Seo ,  Haruto Hamano

发明人： Yoshimi Shiramizu ,  Masaharu Nakamori ,  Hidemitsu Aoki ,  Hirofumi Seo ,  Haruto Hamano

IPC分类号： C02F1/36 ,  C02F1/38 ,  C02F1/461 ,  C02F1/48 ,  H01L21/306

CPC分类号： C02F1/38 ,  C02F1/36 ,  C02F1/4618 ,  C02F1/48 ,  C02F1/481 ,  H01L21/02052 ,  C02F2001/46123 ,  C02F2001/46133 ,  C02F2103/04 ,  C02F2201/4611 ,  C02F2201/46115 ,  C02F2201/46125 ,  C02F2201/46155 ,  C02F2201/4618 ,  C02F2201/4619 ,  C02F2209/02 ,  C02F2209/04 ,  C02F2209/05 ,  C02F2209/06 ,  C02F2301/066

摘要： The method for producing electrolyzed water includes the step of applying a voltage to electrodes disposed in an electrolytic cell containing therein pure water including electrolyte therein. A strength of an electric field generated by applying a voltage to the electrodes is controlled to be variable by means of various techniques. The method makes it possible to produce electrolyzed water with a smaller amount of energy than prior methods.

摘要翻译： 生产电解水的方法包括向其中包含电解池的电极施加电压的步骤，其中包含其中包含电解质的纯水。 通过向电极施加电压而产生的电场强度通过各种技术被控制为可变的。 该方法使得可以生产比现有方法更少的能量的电解水。

公开(公告)号：US06323136B1

公开(公告)日：2001-11-27

申请号：US08918162

申请日：1997-08-25

申请人： Yoshimi Shiramizu

发明人： Yoshimi Shiramizu

IPC分类号： H01L213063

CPC分类号： H01L21/306

摘要： A semiconductor substrate is dipped into a contaminating treatment liquid whose pH value is controlled depending on the property of metal impurities, so as to produce a sample contaminated with metal of a desired concentration. Alternatively, a semiconductor substrate is kept in a hermetic container along with desired organic matter so as to produce a sample contaminated with the organic matter in the form of vapor obtained through vapor-liquid or vapor-solid equilibrium.

摘要翻译： 将半导体衬底浸入其pH值根据金属杂质的性质控制的污染处理液中，以产生被所需浓度的金属污染的样品。 或者，半导体衬底与期望的有机物质一起保存在密封容器中，以便产生以通过气液或气 - 固 - 平衡获得的蒸气形式的有机物污染的样品。

公开(公告)号：US5549798A

公开(公告)日：1996-08-27

申请号：US409306

申请日：1995-03-24

申请人： Hiroshi Kitajima ,  Hidemitsu Aoki ,  Haruto Hamano ,  Makoto Morita ,  Yoshimi Shiramizu ,  Masaharu Nakamori ,  Kaori Watanabe ,  Hirofumi Seo ,  Yuji Shimizu ,  Makoto Iuchi ,  Yasushi Sasaki ,  Nahomi Ohta

发明人： Hiroshi Kitajima ,  Hidemitsu Aoki ,  Haruto Hamano ,  Makoto Morita ,  Yoshimi Shiramizu ,  Masaharu Nakamori ,  Kaori Watanabe ,  Hirofumi Seo ,  Yuji Shimizu ,  Makoto Iuchi ,  Yasushi Sasaki ,  Nahomi Ohta

IPC分类号： C02F1/461 ,  H01L21/00 ,  C25F7/02 ,  C25B15/02 ,  C25B15/08

CPC分类号： H01L21/67086 ,  C02F1/4618 ,  C02F2201/46115 ,  C02F2201/4612 ,  C02F2201/4618 ,  C02F2201/46185 ,  C02F2201/4619 ,  C02F2209/04 ,  C02F2209/06 ,  C02F2209/42 ,  C02F2301/066

摘要： In a wet processing apparatus, an electrolytic cell, a first storing cell for storing anode active water of the electrolytic cell, a first processing cell for processing a target with the anode active water of the first storing cell, a second storing cell for storing cathode active water of the electrolytic cell, and a second processing cell for processing a target with the cathode active water of the second storing cell are provided. Also, a first reactivating feedback path is provided between the first processing cell and an anode region of the electrolytic cell, and a second reactivating feedback path is provided between the second processing cell and a cathode region of the electrolytic cell.

摘要翻译： 在湿式处理装置中，电解槽，用于存储电解槽的阳极活性水的第一储存池，用第一储存池的阳极活性水处理目标物的第一处理池，存储阴极的第二储存池 提供电解槽的活性水，以及用于利用第二存储单元的阴极活性水处理靶的第二处理槽。 此外，在第一处理单元和电解槽的阳极区之间设置有第一再激活反馈路径，在第二处理单元与电解槽的阴极区之间设置第二再激活反馈路径。

公开(公告)号：US5509970A

公开(公告)日：1996-04-23

申请号：US308302

申请日：1994-09-19

申请人： Yoshimi Shiramizu

发明人： Yoshimi Shiramizu

IPC分类号： C11D7/32 ,  H01L21/304 ,  H01L21/306 ,  C23G1/02 ,  C23G1/14

CPC分类号： H01L21/02052

摘要： Cleaning methods for semiconductor substrates which can remove metallic impurities and natural oxide films from the surface of the substrate. As a cleaning solution, aqueous acid solution containing 0.0001-0.001 weight % of ammonia based on a conversion off the amount off ammonium hydroxide or 0.0005-0.01 weight % of EDTA is used. The cleaning solution preferably contains 1-10 weight % of hydrogen fluoride. Metallic impurities removed from the surface of the substrate into the cleaning solution form complexes or chelates with ammonia molecules or EDTA molecules, thereby masking the metallic impurities.

摘要翻译： 可从衬底表面去除金属杂质和天然氧化物膜的半导体衬底的清洁方法。 作为清洗溶液，使用含有0.0001-0.001重量％氨水的酸水溶液，其基于从氢氧化铵换算的量或0.0005-0.01重量％的EDTA。 清洗液优选含有1-10重量％的氟化氢。 从基材表面除去清洗液中的金属杂质与氨分子或EDTA分子形成复合物或螯合物，从而掩蔽金属杂质。

公开(公告)号：US20050196881A1

公开(公告)日：2005-09-08

申请号：US11070096

申请日：2005-03-03

申请人： Yoshimi Shiramizu

发明人： Yoshimi Shiramizu

IPC分类号： G01N23/223 ,  G01N1/22 ,  G01N1/28 ,  G01N1/32 ,  H01L21/66

CPC分类号： G01N1/4044 ,  G01N1/32 ,  G01N23/223 ,  G01N2223/076 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various kinds of metal elements existing on the surface of a wafer are analyzed with higher sensitivity. A high concentration HF solution is dropped onto a surface of a wafer. By providing the droplets of high concentration HF solution, the native oxide film on the surface of the wafer is dissolved into the solution, and the metal elements or compounds thereof existing in vicinity of the surface of the wafer are eliminated from the wafer and are incorporated into the high concentration HF solution. The droplets formed by agglomerating the high concentration HF solution are aggregated at a predetermined position on the surface of the wafer. Then, the recovered droplet of the high concentration HF solution is dried. The aggregated material is irradiated with X-ray at an angle for promoting total reflection, and the total reflection X-ray fluorescence spectrometry is conducted to detect the emitted X-ray.

摘要翻译： 以更高的灵敏度分析存在于晶片表面上的各种金属元素。 将高浓度的HF溶液滴到晶片的表面上。 通过提供高浓度HF溶液的液​​滴，将晶片表面上的自然氧化膜溶解到溶液中，并且将存在于晶片表面附近的金属元素或其化合物从晶片中除去并被结合 进入高浓度HF溶液。 通过聚集高浓度HF溶液形成的液滴在晶片表面上的预定位置聚集。 然后，将高浓度HF溶液的回收液滴干燥。 以促进全反射的角度用X射线照射聚集的材料，进行全反射X射线荧光光谱法以检测发射的X射线。