发明授权
- 专利标题： Method and apparatus for producing a wafer
- 专利标题（中）： 用于制造晶片的方法和装置
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申请号： US08833125申请日： 1997-04-04
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公开(公告)号： US06284661B1公开(公告)日： 2001-09-04
- 发明人: Takashi Yokoyama , Kazuma Yamamoto , Masato Yamamoto , Takahiro Mishima , Go Matsuda , Shigeki Itou
- 申请人： Takashi Yokoyama , Kazuma Yamamoto , Masato Yamamoto , Takahiro Mishima , Go Matsuda , Shigeki Itou
- 优先权： JP8-082423 19960404
- 主分类号： B28D500
- IPC分类号： B28D500
摘要：
A method and an apparatus for cutting a wafer from a crystalline ingot, by directing a stream or streams of etching gas at the crystalline ingot in a vacuum. Waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.