摘要:
A method and an apparatus for producing a wafer from a crystalline ingot, wherein the method supplies an etching gas, having a high etching property for at least one constituent of the crystalline ingot, in a state of a molecular beam stream on a predetermined part of the crystalline ingot to be processed, volatilizing the predetermined part gradually from the ingot, and then removing the predetermined part entirely so as to cut the wafer from the ingot. According to the method, waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.
摘要:
A method and an apparatus for cutting a wafer from a crystalline ingot, by directing a stream or streams of etching gas at the crystalline ingot in a vacuum. Waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.
摘要:
The present invention intends to provide an industrially applicable diamond electrode and a diamond-coated silicon used in the electrode. A silicon substrate having a thickness of 500 μm or less, at least partially coated with electrically conductive diamond is used as a diamond-coated silicon. In addition, an electrically conductive support substrate and the diamond-coated silicon is used as an electrode. The diamond-coated silicon is flexible and it can be adhered to the electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be easily obtained.
摘要:
A first solar cell is electrically connected to a second solar cell electrically and arranged in an array direction. Each of the first and second solar cell comprises: a light-receiving surface; a rear surface; a plurality of n-type side electrodes and p-type side electrodes both formed in the array direction on the rear surface; a wiring member electrically connecting the first solar cell and the second solar cell and arranged over the plurality of n-type side electrodes and the plurality of p-type side electrodes; an n-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of n-type side electrodes, the part facing the wiring member; and a p-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of p-type side electrodes, the part facing the wiring member.
摘要:
Provided are aluminum titanate capable of providing a sintered body having a low coefficient of thermal expansion, a high porosity, and high mechanical strength, a production method of the same, and a sintered body of the columnar aluminum titanate. The columnar aluminum titanate has an average aspect ratio (=(number average major-axis length)/(number average minor-axis length)) of 1.5 or more and its magnesium content is preferably within the range of 0.5% to 2.0% by weight relative to the total amount of titanium and aluminum in terms of their respective oxides.
摘要:
A density calculating apparatus includes: an image data acquisition section that acquires print image data representing a print image; a place designating section that designates a place on the print image; and a target color acquisition section that acquires a target color of a color of the place. The apparatus further includes: a color guess section that guesses a print color of the place to be printed by a printing system, by using a patch image produced based on a predetermined criterion; and a density calculation section that calculates the print densities of the color materials having the multiple colors by using the color guess section so that the target color is achieved at the place by the printing system based on the print image data.
摘要:
In a solar cell module 100, a wiring member 11 has a plurality of recesses 11a formed in a facing surface S facing a resin adhesive 12. the resin adhesive 12 enters each of the plurality of recesses 11a and thereby exerts an anchor effect.
摘要:
Disclosed are a hydrogen-occluding alloy electrode comprising an alloy powder wherein the alloy comprises a Ti-V solid solution mother phase and a secondary phase predominantly containing a Ti-Ni phase or an AB.sub.2 Laves phase in which the secondary phase forms a three-dimensional reticulate skeleton in the alloy; said hydrogen-occluding alloy powder surface-treated with hydrofluoric acid, to provide a titanium hydride surface and surface-coated with at least one metal of Ni, Cu and Co.
摘要:
A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.
摘要:
Provided are an exhaust gas purification filter having a high particulate matter (PM) combustion efficiency, a low coefficient of thermal expansion, and superior thermal resistance and a method for producing the same. An exhaust gas purification filter is formed by sintering columnar aluminum titanate particles whose surfaces have a catalyst material deposited thereon and which have an average aspect ratio (=number average major-axis length/number average minor-axis length) of 1.3 or more, wherein a catalyst made from the catalyst material by thermal treatment during the sintering is supported on the surface of the aluminum titanate.