发明授权
- 专利标题: High speed sensing to detect write protect state in a flash memory device
- 专利标题(中): 高速感应检测闪存设备中的写保护状态
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申请号: US09506351申请日: 2000-02-17
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公开(公告)号: US06285583B1公开(公告)日: 2001-09-04
- 发明人: Lee Edward Cleveland , Kendra Nguyen
- 申请人: Lee Edward Cleveland , Kendra Nguyen
- 主分类号: G11C1604
- IPC分类号: G11C1604
摘要:
A flash memory device (100) includes a core cell array including two banks (194, 196) of core cells and address decoding circuitry (112, 114, 118, 120) and a write protect circuit. The write protect circuit includes sector write protect circuits (210) associated with respective sectors (202) of the core cell array in storing write protect data for the associated sector. The write protect circuit further includes a switch circuit (404) which selects one sector write protect signal in response to a write select signal to produce a combined write protect signal. The write protect circuit further includes an output circuit (406) coupled to the switch circuit to produce a sector write protect signal.