A new method is provided for the creation of layers of dielectric that are used for metal stack interconnect layers where the metal stack exceeds five layers. A stack of five layers of metal interconnect lines contains one layer of Intra Metal dielectric (ILD) and four layers of Inter Metal dielectric (IMD). One or more of the layers of IMD can be formed in the conventional method. One or more of the layers of IMD can be formed in the conventional method after which a layer of high compressive PECVD is deposited over this one or more layers of IMD. The layer of high compressive PECVD provides a crack resistant film that eliminates the formation of cracks in the surface of the IMD.