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发明授权
US06291363B1 Surface treatment of DARC films to reduce defects in subsequent cap layers 有权
DARC薄膜的表面处理，以减少后续盖层的缺陷

  • 专利标题： Surface treatment of DARC films to reduce defects in subsequent cap layers
  • 专利标题（中）： DARC薄膜的表面处理，以减少后续盖层的缺陷
  • 申请号： US09259713
    申请日： 1999-03-01
  • 公开(公告)号： US06291363B1
    公开(公告)日： 2001-09-18
  • 发明人: Zhiping Yin , Gurtej Singh Sandhu
  • 申请人： Zhiping Yin , Gurtej Singh Sandhu
  • 主分类号： H01L2131
  • IPC分类号： H01L2131
Surface treatment of DARC films to reduce defects in subsequent cap layers
摘要：
The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprising providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silcon-based compound and N2O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.
摘要（中）：

本发明包括防止在覆盖DARC涂层的基板中形成粒子的方法。 该方法包括提供半导体构造。 DARC涂层沉积在构建体上，该等离子体包含硅氧烷基化合物和N2O。 DARC涂层暴露于有效防止在基底层中形成缺陷的气氛。 暴露的DARC涂层与基材重叠。

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