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101 条记录 (耗时 0.184 秒)

    Waveguide for thermo optic device
    1.
    发明授权
    Waveguide for thermo optic device 有权
    波导用于光电装置

    公开(公告)号：US07936955B2

    公开(公告)日：2011-05-03

    申请号：US12780601

    申请日：2010-05-14

    申请人： Guy T. Blalock ,  Howard E. Rhodes ,  Vishnu K. Agarwal ,  Gurtej Singh Sandhu ,  James S. Foresi ,  Jean-Francois Viens ,  Dale G. Fried

    发明人： Guy T. Blalock ,  Howard E. Rhodes ,  Vishnu K. Agarwal ,  Gurtej Singh Sandhu ,  James S. Foresi ,  Jean-Francois Viens ,  Dale G. Fried

    IPC分类号： G02B6/26

    CPC分类号： G02F1/025 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12107 ,  G02B2006/12164 ,  G02F1/0147 ,  G02F2203/15

    摘要： A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.

    摘要翻译： 波导和谐振器形成在热光器件的下包层上，每个具有基本上相等的形成高度。 此后，波导的形成高度被衰减。 以这种方式，波导和谐振器在波导和谐振器前面或彼此面对的区域（与现有技术相比）中的波导和谐振器之间的纵横比，从而恢复波导和光栅之间的同步性并允许更高的带宽配置 要使用的。 在形成谐振器和波导之后，通过光掩模和蚀刻波导来实现波导衰减。 在一个实施例中，在沉积上部包层之后进行光掩模和蚀刻。 另一方面，它是在沉积之前进行的。 还教导了具有这些波导的热光器件，热光封装和光纤系统。

    Dopant barrier for doped glass in memory devices
    2.
    发明授权
    Dopant barrier for doped glass in memory devices 有权
    存储器件中掺杂玻璃的掺杂阻挡层

    公开(公告)号：US07411255B2

    公开(公告)日：2008-08-12

    申请号：US11003138

    申请日：2004-12-03

    申请人： Kunal R. Parekh ,  Gurtej Singh Sandhu

    发明人： Kunal R. Parekh ,  Gurtej Singh Sandhu

    IPC分类号： H01L29/76

    CPC分类号： H01L21/76897 ,  H01L21/28247 ,  H01L21/3003 ,  H01L21/76832

    摘要： A semiconductor device has a diffusion barrier formed between a doped glass layer and surface structures formed on a substrate. The diffusion barrier includes alumina and optionally a nitride, and has a layer thickness satisfying the high aspect ratio of the gaps between the surface structures, while adequately preventing dopants in doped glass layer from diffusing out of the doped glass layer to the surface structures and the substrate. Further, heavy water can be used during the formation of the alumina so that deuterium may be accomplished near the interface of surface structures and the substrate to enhance the performance of the device.

    摘要翻译： 半导体器件具有在掺杂的玻璃层和形成在衬底上的表面结构之间形成的扩散阻挡层。 扩散阻挡层包括氧化铝和任选的氮化物，并且具有满足表面结构之间的间隙的高纵横比的层厚度，同时充分防止掺杂的玻璃层中的掺杂剂从掺杂的玻璃层扩散到表面结构，并且 基质。 此外，在形成氧化铝期间可以使用重水，使得可以在表面结构和基底的界面附近实现氘，以增强器件的性能。

    Waveguide for thermo optic device
    3.
    发明授权
    Waveguide for thermo optic device 失效
    波导用于光电装置

    公开(公告)号：US07359607B2

    公开(公告)日：2008-04-15

    申请号：US10929271

    申请日：2004-08-30

    申请人： Guy T. Blalock ,  Howard E. Rhodes ,  Vishnu K. Agarwal ,  Gurtej Singh Sandhu ,  James S. Foresi ,  Jean-Francois Viens ,  Dale G. Fried

    发明人： Guy T. Blalock ,  Howard E. Rhodes ,  Vishnu K. Agarwal ,  Gurtej Singh Sandhu ,  James S. Foresi ,  Jean-Francois Viens ,  Dale G. Fried

    IPC分类号： G02B6/10

    CPC分类号： G02F1/025 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12107 ,  G02B2006/12164 ,  G02F1/0147 ,  G02F2203/15

    摘要： A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.

    摘要翻译： 波导和谐振器形成在热光器件的下包层上，每个具有基本相等的形成高度。 此后，波导的形成高度被衰减。 以这种方式，波导和谐振器在波导和谐振器前面或彼此面对的区域（与现有技术相比）中的波导和谐振器之间的纵横比，从而恢复波导和光栅之间的同步性并允许更高的带宽配置 要使用的。 在形成谐振器和波导之后，通过光掩模和蚀刻波导来实现波导衰减。 在一个实施例中，在沉积上部包层之后进行光掩模和蚀刻。 另一方面，它是在沉积之前进行的。 还教导了具有这些波导的热光器件，热光封装和光纤系统。

    Enhanced atomic layer deposition
    6.
    发明授权
    Enhanced atomic layer deposition 有权
    增强原子层沉积

    公开(公告)号：US07279732B2

    公开(公告)日：2007-10-09

    申请号：US10854593

    申请日：2004-05-26

    申请人： Shuang Meng ,  Garo J. Derderian ,  Gurtej Singh Sandhu

    发明人： Shuang Meng ,  Garo J. Derderian ,  Gurtej Singh Sandhu

    IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L29/511 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02183 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3141 ,  H01L21/76843 ,  H01L28/75 ,  H01L28/84 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF5 and NH3. In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.

    摘要翻译： 描述了增加原子层沉积的方法。 在一个实施例中，增强是使用等离子体。 等离子体在将第二前体流入室之前开始。 第二前体与先前的前体反应以在基底上沉积一层。 在一个实施方案中，该层包括来自第一和第二前体中的每一个的至少一种元素。 在一个实施例中，层是TaN。 在一个实施方案中，前体是TaF 5 N和NH 3。 在一个实施例中，等离子体在第一前体的脉冲和第二前体的脉冲之间的吹扫气流期间开始。 在一个实施例中，增强是热能。 在一个实施例中，热能大于ALD（> 300摄氏度）通常接受的热能。 该增强有助于前体在基底上沉积一层的反应。

    Small grain size, conformal aluminum interconnects and method for their formation
    7.
    发明授权
    Small grain size, conformal aluminum interconnects and method for their formation 有权
    小晶粒尺寸，共形铝互连及其形成方法

    公开(公告)号：US07276795B2

    公开(公告)日：2007-10-02

    申请号：US10899736

    申请日：2004-07-27

    申请人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

    发明人： Wing-Cheong Gilbert Lai ,  Gurtej Singh Sandhu

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877

    摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

    摘要翻译： 第一层氮化钛（TiN）形成在诸如互连通孔的半导体结构上。 然后，在第一TiN层上形成第二TiN层。 第一层TiN是无定形的。 第二层TiN是多晶的，具有混晶粒取向。 最后，在第二层氮化钛上形成铝膜。 可选地，在形成第一层氮化钛的步骤之前，在半导体结构上形成硅化钛层。 根据本发明形成的互连件具有晶粒尺寸大约小于0.25微米的多晶铝膜。

    Conductive container structures having a dielectric cap
    9.
    发明授权
    Conductive container structures having a dielectric cap 有权
    具有电介质盖的导电容器结构

    公开(公告)号：US07199415B2

    公开(公告)日：2007-04-03

    申请号：US10931408

    申请日：2004-08-31

    申请人： Gurtej Singh Sandhu ,  Alan R. Reinberg

    发明人： Gurtej Singh Sandhu ,  Alan R. Reinberg

    IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L29/00

    CPC分类号： H01L28/90 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91 ,  Y10S257/906

    摘要： Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conductive debris across the tops of adjacent container structures. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

    摘要翻译： 用于集成电路的集装箱结构及其制造方法。 容器结构在导电容器的顶部上具有电介质盖，以通过隔离导电碎片穿过相邻容器结构顶部的桥接来降低容器与容器短路的风险。 容器结构适用于并入这种存储单元的存储器单元和装置以及其它集成电路。

    Resonator for thermo optic device
    10.
    发明授权
    Resonator for thermo optic device 有权

    公开(公告)号：US07120336B2

    公开(公告)日：2006-10-10

    申请号：US10231897

    申请日：2002-08-29

    申请人： Gurtej Singh Sandhu ,  Guy T. Blalock ,  Howard E. Rhodes

    发明人： Gurtej Singh Sandhu ,  Guy T. Blalock ,  Howard E. Rhodes

    IPC分类号： G02B6/26 ,  G02B6/42

    CPC分类号： G02B6/132 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/136 ,  G02F1/011 ,  G02F1/0147 ,  G02F2203/15

    摘要： A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.