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    Surface treatment of DARC films to reduce defects in subsequent cap layers
    3.
    发明授权
    Surface treatment of DARC films to reduce defects in subsequent cap layers 有权
    DARC薄膜的表面处理，以减少后续盖层的缺陷

    公开(公告)号：US06291363B1

    公开(公告)日：2001-09-18

    申请号：US09259713

    申请日：1999-03-01

    申请人： Zhiping Yin ,  Gurtej Singh Sandhu

    发明人： Zhiping Yin ,  Gurtej Singh Sandhu

    IPC分类号： H01L2131

    CPC分类号： H01L21/3105 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/3145 ,  H01L21/32139

    摘要： The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprising providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silcon-based compound and N2O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.

    摘要翻译： 本发明包括防止在覆盖DARC涂层的基板中形成粒子的方法。 该方法包括提供半导体构造。 DARC涂层沉积在构建体上，该等离子体包含硅氧烷基化合物和N2O。 DARC涂层暴露于有效防止在基底层中形成缺陷的气氛。 暴露的DARC涂层与基材重叠。

    Surface treatment of DARC films to reduce defects in subsequent cap layers
    4.
    发明授权
    Surface treatment of DARC films to reduce defects in subsequent cap layers 失效
    DARC薄膜的表面处理，以减少后续盖层的缺陷

    公开(公告)号：US06734518B2

    公开(公告)日：2004-05-11

    申请号：US09924759

    申请日：2001-08-08

    申请人： Zhiping Yin ,  Gurtej Singh Sandhu

    发明人： Zhiping Yin ,  Gurtej Singh Sandhu

    IPC分类号： H01L310232

    CPC分类号： H01L21/3105 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/3145 ,  H01L21/32139

    摘要： The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprises providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silicon-based compound and N2O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.

    摘要翻译： 本发明包括防止在覆盖DARC涂层的基板中形成粒子的方法。 该方法包括提供半导体构造。 使用包含硅基化合物和N 2 O的等离子体在构建体上沉积DARC涂层。 DARC涂层暴露于有效防止在基底层中形成缺陷的气氛。 暴露的DARC涂层与基材重叠。

    Prevention of photoresist scumming
    7.
    发明授权
    Prevention of photoresist scumming 有权
    防止光刻胶浮渣

    公开(公告)号：US08129093B2

    公开(公告)日：2012-03-06

    申请号：US12761151

    申请日：2010-04-15

    申请人： Zhiping Yin ,  Jingyi Bai

    发明人： Zhiping Yin ,  Jingyi Bai

    IPC分类号： G03F7/26

    CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/091

    摘要： A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer is a layer of spun-on acid or PAG dissolved in aqueous solution. In another embodiment, the increased acid layer is a hard mask material with a PAG or an acid mixed into the material. The high acid content inhibits the diffusion of acid from the photoresist into neighboring layers, and thus substantially reduces photoresist scumming and footing.

    摘要翻译： 使用光酸产生剂（PAG）或酸来降低抗污垢和基底。 酸从光致抗蚀剂扩散到邻居会导致酸水平降低，从而导致抗污垢浮渣。 抗蚀剂下面的增加的酸层防止酸扩散。 在一个实施方案中，增加的酸层是溶解在水溶液中的纺丝酸或PAG层。 在另一个实施方案中，增加的酸层是具有混合到该材料中的PAG或酸的硬掩模材料。 高酸含量抑制酸从光致抗蚀剂扩散到相邻层中，从而基本上减少光致抗蚀剂的浮渣和基底。

    IMAGE SENSORS WITH PIXEL CHARGE SUMMING
    8.
    发明申请
    IMAGE SENSORS WITH PIXEL CHARGE SUMMING 有权
    图像传感器与像素充电夏季

    公开(公告)号：US20110019051A1

    公开(公告)日：2011-01-27

    申请号：US12509398

    申请日：2009-07-24

    申请人： Zhiping Yin ,  John W. Ladd

    发明人： Zhiping Yin ,  John W. Ladd

    IPC分类号： H04N5/335

    CPC分类号： H04N5/378 ,  H04N5/347 ,  H04N9/07

    摘要： An image sensor has an array of pixels of different colors. The pixels may be arranged in a repeating pattern of eight pixels having four rows and two columns. During charge summing operations, the first and third rows may share a floating diffusion and the second and fourth rows may share a floating diffusion. When charge summing is inactive, transfer gates in the first and second columns may be controlled independently, while transfer gates in pairs of rows may be controlled simultaneously. When charge summing is active, summed charges from pixels of the same color in the first and third rows may be placed on the floating diffusion shared by the first and third rows and summed charges from pixels of the same color in the second and fourth rows may be placed on the floating diffusion shared by the second and fourth rows.

    摘要翻译： 图像传感器具有不同颜色的像素阵列。 像素可以以具有四行和两列的八个像素的重复图案布置。 在电荷求和操作期间，第一和第三行可以共享浮动扩散，并且第二和第四行可以共享浮动扩散。 当电荷求和不活动时，可以独立地控制第一和第二列中的传输门，同时可以同时控制成对行的传输门。 当充电求和有效时，第一和第三行中相同颜色的像素的相加电荷可以被放置在由第一和第三行共享的浮动扩散上，并且第二行和第四行中相同颜色的像素的相加电荷可以 放置在由第二和第四行共享的浮动扩散上。

    Semiconductor constructions having antireflective portions
    9.
    发明授权
    Semiconductor constructions having antireflective portions 有权
    具有抗反射部分的半导体结构

    公开(公告)号：US07804115B2

    公开(公告)日：2010-09-28

    申请号：US11482244

    申请日：2006-07-07

    申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

    发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

    IPC分类号： H01L31/062 ,  C09K19/00

    CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10T428/1086

    摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

    摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

    Interconnect structures with interlayer dielectric
    10.
    发明授权
    Interconnect structures with interlayer dielectric 失效
    互连结构与层间电介质

    公开(公告)号：US07659630B2

    公开(公告)日：2010-02-09

    申请号：US11841180

    申请日：2007-08-20

    申请人： Zhiping Yin ,  Mark E. Jost

    发明人： Zhiping Yin ,  Mark E. Jost

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76849 ,  H01L21/76801 ,  H01L21/76867

    摘要： The present invention relates to metallic interconnect having an interlayer dielectric thereover, the metallic interconnect having an upper surface substantially free from oxidation. The metallic interconnect may have an exposed upper surface thereon that is passivated by a nitrogen containing compound.

    摘要翻译： 本发明涉及在其上具有层间电介质的金属互连，金属互连具有基本上没有氧化的上表面。 金属互连可以在其上具有被含氮化合物钝化的暴露的上表面。