发明授权
US06299724B1 Direct vapor delivery of enabling chemical for enhanced HF etch process performance
失效
直接蒸汽输送使化学品增强HF蚀刻工艺性能
- 专利标题: Direct vapor delivery of enabling chemical for enhanced HF etch process performance
- 专利标题(中): 直接蒸汽输送使化学品增强HF蚀刻工艺性能
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申请号: US09535761申请日: 2000-03-28
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公开(公告)号: US06299724B1公开(公告)日: 2001-10-09
- 发明人: Robert T. Fayfield , John M. Heitzinger
- 申请人: Robert T. Fayfield , John M. Heitzinger
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
Apparatus and method for direct delivery of enabling chemical gas from a liquid source and of HF gas in a hydrogen fluoride/enabling chemical based cleaning or etching process, such as a silicon dioxide film etching process. The liquid enabling chemical is temperature controlled to generate a vapor pressure which is sufficient to operate a mass flow controller at a desired processing pressure without a carrier gas. Prior to entering the process chamber, the enabling chemical gas is pre-mixed with HF and optionally, a carrier gas, all of which are supplied at flow rates independent of each other. By controlling the vapor pressure of the solvent in this way, solvent/HF/carrier mixtures which are not physically possible with carrier gas systems are attainable allowing access to a larger process space.