发明授权
US06303498B1 Method for preventing seed layer oxidation for high aspect gap fill
有权
防止种子层氧化的高方位缝隙填充方法
- 专利标题： Method for preventing seed layer oxidation for high aspect gap fill
- 专利标题（中）： 防止种子层氧化的高方位缝隙填充方法
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申请号： US09378497申请日： 1999-08-20
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公开(公告)号： US06303498B1公开(公告)日： 2001-10-16
- 发明人: Sheng-Hsiung Chen , Ming-Hsing Tsai
- 申请人： Sheng-Hsiung Chen , Ming-Hsing Tsai
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A new method is provided whereby a copper seed layer is deposited over a barrier layer of TaN. Under the first embodiment of the invention, a doped seed layer is deposited over the barrier layer. Under the second embodiment of the invention a thin layer of metal is deposited over a seed layer of pure copper thereby preventing oxidation of the copper seed layer.
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