发明授权
- 专利标题: Dynamic random access memory
- 专利标题(中): 动态随机存取存储器
-
申请号: US09688083申请日: 2000-10-16
-
公开(公告)号: US06307796B1公开(公告)日: 2001-10-23
- 发明人: Junichi Okamura , Tohru Furuyama
- 申请人: Junichi Okamura , Tohru Furuyama
- 优先权: JP2-418371 19901226
- 主分类号: G11C700
- IPC分类号: G11C700
摘要:
A dynamic random access memory includes a plurality of dynamic memory cells arranged in rows and columns, a word line connected to the memory cells on the same row, a bit line connected to the memory cells on the same column, a word line selecting circuit having a word line selecting function of selecting an arbitrary one of the rows in response to an internal address signal, a word line driving voltage source, a word line driving circuit having at least one driving MOS transistor connected between the word line driving voltage source and the word line, for driving the word line in response to an output signal of the word line selecting circuit, and a control circuit for, in response to a voltage stress test control signal input from outside, controlling the word line driving circuit so that the word line driving circuit drives word lines more than those selected in a normal operation mode upon receiving an external address signal.