发明授权
- 专利标题: Projecting type charged particle microscope and projecting type substrate inspection system
- 专利标题(中): 投影式带电粒子显微镜和突出型基片检查系统
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申请号: US09253456申请日: 1999-02-22
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公开(公告)号: US06310341B1公开(公告)日: 2001-10-30
- 发明人: Hideo Todokoro , Tohru Ishitani , Yasutsugu Usami , Shunroku Taya , Hiroyuki Shinada , Taku Ninomiya , Tsuyoshi Ohnishi
- 申请人: Hideo Todokoro , Tohru Ishitani , Yasutsugu Usami , Shunroku Taya , Hiroyuki Shinada , Taku Ninomiya , Tsuyoshi Ohnishi
- 优先权: JP10-040120 19980223
- 主分类号: H01J4944
- IPC分类号: H01J4944
摘要:
An irradiation electron beam emitted from an electron gun is deflected by an energy filter, and passes through a first projective lens and an objective lens, and then irradiated onto a sample to produce secondary electrons. The secondary electron beam accelerated by a negative voltage applied to the sample passes through the objective lens and the first projective lens, and deflected by the energy filter to be energy dispersed. Only the secondary electrons having a specified energy pass through energy selecting aperture, and further pass through a second projective lens to form a projected image of the secondary electrons on an imager. Such an electron-optical system may be used for dimension evaluation or inspection of semiconductor substrates.
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