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47 条记录 (耗时 0.036 秒)

    Projecting type charged particle microscope and projecting type substrate inspection system
    1.
    发明授权
    Projecting type charged particle microscope and projecting type substrate inspection system 有权
    投影式带电粒子显微镜和突出型基片检查系统

    公开(公告)号：US06310341B1

    公开(公告)日：2001-10-30

    申请号：US09253456

    申请日：1999-02-22

    申请人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

    发明人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

    IPC分类号： H01J4944

    CPC分类号： H01J37/28 ,  H01J37/05

    摘要： An irradiation electron beam emitted from an electron gun is deflected by an energy filter, and passes through a first projective lens and an objective lens, and then irradiated onto a sample to produce secondary electrons. The secondary electron beam accelerated by a negative voltage applied to the sample passes through the objective lens and the first projective lens, and deflected by the energy filter to be energy dispersed. Only the secondary electrons having a specified energy pass through energy selecting aperture, and further pass through a second projective lens to form a projected image of the secondary electrons on an imager. Such an electron-optical system may be used for dimension evaluation or inspection of semiconductor substrates.

    摘要翻译： 从电子枪发射的照射电子束被能量过滤器偏转，并通过第一投射透镜和物镜，然后照射到样品上以产生二次电子。 施加到样品的负电压加速的二次电子束通过物镜和第一投射透镜，并被能量过滤器偏转以进行能量分散。 只有具有指定能量的二次电子通过能量选择孔，并且进一步通过第二投影透镜以在成像器上形成二次电子的投影图像。 这样的电子 - 光学系统可以用于半导体衬底的尺寸评估或检查。

    Signal generator and method of generating signal voltages using the same
    10.
    发明授权
    Signal generator and method of generating signal voltages using the same 失效
    信号发生器及使用其产生信号电压的方法

    公开(公告)号：US5198672A

    公开(公告)日：1993-03-30

    申请号：US391292

    申请日：1989-08-09

    申请人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

    发明人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

    IPC分类号： G01R31/302

    CPC分类号： G01R31/302

    摘要： A device for generating voltage signals in a semiconductor device upon irradiation with a charged particle beam, wherein a circuit for converting a beam current of the irradiated charged particle beam into the voltage signals is constituted by a bipolar transistor and a load device contained in the semiconductor device, and a portion of the line pattern connected to the base of the bipolar transistor is irradiated with the charged particle beam, so that signals are generated at high speeds even by using a weak charged particle beam without permitting the device to be broken down.

    摘要翻译： 一种用于在照射带电粒子束时在半导体器件中产生电压信号的装置，其中用于将照射的带电粒子束的束电流转换成电压信号的电路由双极晶体管和包含在半导体中的负载装置构成 器件，并且连接到双极晶体管的基极的线图案的一部分被带电粒子束照射，使得即使通过使用弱带电粒子束也不会使器件被分解而以高速产生信号。