发明授权
- 专利标题： Semiconductor device having an SOI structure
- 专利标题（中）： 具有SOI结构的半导体器件
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申请号： US09134896申请日： 1998-08-17
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公开(公告)号： US06310377B1公开(公告)日： 2001-10-30
- 发明人: Shigenobu Maeda , Yasuo Yamaguchi , Il Jung Kim , Yasuo Inoue , Shigeto Maegawa , Takashi Ipposhi
- 申请人： Shigenobu Maeda , Yasuo Yamaguchi , Il Jung Kim , Yasuo Inoue , Shigeto Maegawa , Takashi Ipposhi
- 优先权： JP8-145621 19960607
- 主分类号： H01L2701
- IPC分类号： H01L2701
摘要：
FS-isolated fields (10a, 10b). LOCOS-isolated fields (11c, 11d). FS-isolated fields (10e, 10f), LOCOS-isolated field (11g, 11h) and FS-isolated field (10i) are arranged in this order. Thus, a master layout can he provided, where SOI transistors having bodies to be supplied with fixed potential and those having bodies not to be supplied with fixed potential are mixed.
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