A memory cell (101), its method of formation, and operation are disclosed. In accordance with one embodiment, the memory cell (101) comprises a first and second current carrying electrode (12) a control electrode (19), and doped discontinuous storage elements (17). In accordance with an alternative embodiment, memory cell programming is accomplished by removing or adding an average of approximately at least a first charge (30, 62, 64), which can be electron(s) or hole(s) from each of the doped discontinuous storage elements (17).