发明授权
- 专利标题： Process for producing semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件制造工艺
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申请号： US08906102申请日： 1997-08-05
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公开(公告)号： US06326216B1公开(公告)日： 2001-12-04
- 发明人: Hisayuki Kato , Hisahiko Abe , Shinji Nishihara , Masahito Yamazaki , Keiichi Yoshizumi
- 申请人： Hisayuki Kato , Hisahiko Abe , Shinji Nishihara , Masahito Yamazaki , Keiichi Yoshizumi
- 优先权： JP8-208657 19960807
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
In order to improve the dielectric constant, residual dielectric polarization, hysteresis characteristics, etc. of a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM, a target having a density of at least 90% of the theoretical value is used in forming, by sputtering, a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM.
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