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    Fabrication method of semiconductor integrated circuit device
    3.
    发明授权
    Fabrication method of semiconductor integrated circuit device 失效
    半导体集成电路器件的制造方法

    公开(公告)号：US06979650B2

    公开(公告)日：2005-12-27

    申请号：US10883754

    申请日：2004-07-06

    申请人： Shinichi Nakabayshi ,  Hisahiko Abe ,  Hirofumi Tsuchiyama ,  Masaki Hiyama ,  Takashi Nishiguchi

    发明人： Shinichi Nakabayshi ,  Hisahiko Abe ,  Hirofumi Tsuchiyama ,  Masaki Hiyama ,  Takashi Nishiguchi

    IPC分类号： B24B57/02 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/461

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/76229

    摘要： In order to reduce micro scratches which tend to occur during chemical-mechanical polishing, a polishing slurry is diluted with deionized water immediately before it is supplied in a gap between a polishing pad and the surface of a wafer to be polished. By diluting the polishing slurry with deionized water to increase its volume, the concentration of coagulated particles contained in the polishing slurry can be lowered. For a mixture ratio of the polishing slurry and deionized water, about 1 (polishing slurry): 1–1.2 (deionized water) is used, and the concentration of silica contained in the diluted polishing slurry is adjusted to about 3–9 weight %, preferably about 4–8 weight %, and more preferably about 8 weight %.

    摘要翻译： 为了减少在化学机械抛光期间容易发生的微小划痕，抛光浆料在其被提供在抛光垫和待抛光晶片表面之间的间隙中之前，用去离子水稀释。 通过用去离子水稀释抛光浆料以增加其体积，可以降低抛光浆料中所含的凝结颗粒的浓度。 对于抛光浆料和去离子水的混合比，使用约1（抛光浆料）：1-1.2（去离子水），将稀释的研磨浆料中所含的二氧化硅浓度调节至约3-9重量％ 优选约4-8重量％，更优选约8重量％。

    Method of polishing semiconductor wafer
    4.
    发明申请
    Method of polishing semiconductor wafer 失效
    抛光半导体晶片的方法

    公开(公告)号：US20050245169A1

    公开(公告)日：2005-11-03

    申请号：US11117294

    申请日：2005-04-29

    申请人： Toshihiro Morisawa ,  Hisahiko Abe ,  Kosaku Tachikawa ,  Toshihiro Nakajima

    发明人： Toshihiro Morisawa ,  Hisahiko Abe ,  Kosaku Tachikawa ,  Toshihiro Nakajima

    IPC分类号： B24B37/04 ,  H01L21/304 ,  B24B49/00

    CPC分类号： B24B49/00 ,  B24B37/042

    摘要： In a wafer polishing method, a within-wafer distribution model of a removal rate and a within-wafer distribution model of a polishing process are selected, and a within-wafer distribution of a removal rate is obtained by determining parameters of a within-wafer distribution model of a removal rate based on the within-wafer distribution of the film thickness before/after CMP, polishing condition data, and the selected within-wafer distribution model of the polishing process of the polished wafer. Then, a film thickness in the polishing process is estimated from passage of time based on the obtained within-wafer distribution of the removal rate, the selected within-wafer distribution model of the polishing process, and the film thickness before CMP of the wafer to be processed, thereby determining the polishing conditions with a restriction that the film thickness at each position in the within-wafer distribution of the film thickness after CMP satisfies the control limit.

    摘要翻译： 在晶片抛光方法中，选择抛光过程的晶片内分布模型和晶片内分布模型，并通过确定晶片内部的参数来获得去除速率的晶片内分布 基于在CMP之前/之后的膜厚度的晶片内分布，抛光条件数据以及抛光晶片的抛光工艺的所选择的晶片内分布模型中的去除速率的分布模型。 然后，基于所获得的去除速度的晶片内分布，所选择的抛光工艺的晶片内分布模型以及晶片CMP之前的膜厚度，估计晶片的研磨过程中的膜厚度。 进行处理，由此确定抛光条件，限制了CMP之后的膜厚分布内的各位置的膜厚满足控制极限。

    Semiconductor integrated circuit device manufacturing method including chemical mechanical polishing, and detection and evaluation of microscratches caused thereby
    5.
    发明授权
    Semiconductor integrated circuit device manufacturing method including chemical mechanical polishing, and detection and evaluation of microscratches caused thereby 失效
    半导体集成电路器件制造方法包括化学机械抛光，以及由此引起的微细纹的检测和评估

    公开(公告)号：US06468817B2

    公开(公告)日：2002-10-22

    申请号：US09934561

    申请日：2001-08-23

    申请人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Hirofumi Tsuchiyama ,  Yukio Kenbo ,  Yoshiteru Katsumura

    发明人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Hirofumi Tsuchiyama ,  Yukio Kenbo ,  Yoshiteru Katsumura

    IPC分类号： H01L2166

    CPC分类号： H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process. The method comprises: forming an insulating film on main surfaces of a plurality of first wafers which flow through a mass-production process; preparing a dummy wafer for monitoring, on which a silicon-oxide-based insulating film is formed; performing chemical mechanical polishing on the insulating films respectively formed on main surfaces of the plurality of first wafers and the dummy wafer; performing etching on the insulating film of the dummy wafer with use of a solution containing hydrofluoric acid, after the step of performing the chemical mechanical polishing; and measuring a number of scratches on the insulating film of the dummy wafer subjected to the etching.

    摘要翻译： 在制造方法中，在对通过批量生产工艺流动的晶片进行击穿检测的情况下，检测到微小的划痕。 该方法包括：在流过批量生产过程的多个第一晶片的主表面上形成绝缘膜; 制备用于监测的伪晶片，其上形成氧化硅基绝缘膜; 对分别形成在多个第一晶片和虚设晶片的主表面上的绝缘膜执行化学机械抛光; 在进行化学机械抛光的步骤之后，使用含有氢氟酸的溶液在虚拟晶片的绝缘膜上进行蚀刻; 并测量经过蚀刻的虚设晶片的绝缘膜上的划痕数。

    Method of polishing semiconductor wafer
    7.
    发明授权
    Method of polishing semiconductor wafer 失效
    抛光半导体晶片的方法

    公开(公告)号：US07070477B2

    公开(公告)日：2006-07-04

    申请号：US11117294

    申请日：2005-04-29

    申请人： Toshihiro Morisawa ,  Hisahiko Abe ,  Kosaku Tachikawa ,  Toshihiro Nakajima

    发明人： Toshihiro Morisawa ,  Hisahiko Abe ,  Kosaku Tachikawa ,  Toshihiro Nakajima

    IPC分类号： B24B49/00

    CPC分类号： B24B49/00 ,  B24B37/042

    摘要： In a wafer polishing method, a within-wafer distribution model of a removal rate and a within-wafer distribution model of a polishing process are selected, and a within-wafer distribution of a removal rate is obtained by determining parameters of a within-wafer distribution model of a removal rate based on the within-wafer distribution of the film thickness before/after CMP, polishing condition data, and the selected within-wafer distribution model of the polishing process of the polished wafer. Then, a film thickness in the polishing process is estimated from passage of time based on the obtained within-wafer distribution of the removal rate, the selected within-wafer distribution model of the polishing process, and the film thickness before CMP of the wafer to be processed, thereby determining the polishing conditions with a restriction that the film thickness at each position in the within-wafer distribution of the film thickness after CMP satisfies the control limit.

    摘要翻译： 在晶片抛光方法中，选择抛光过程的晶片内分布模型和晶片内分布模型，并通过确定晶片内部的参数来获得去除速率的晶片内分布 基于在CMP之前/之后的膜厚度的晶片内分布，抛光条件数据以及抛光晶片的抛光工艺的所选择的晶片内分布模型中的去除速率的分布模型。 然后，基于所获得的去除速度的晶片内分布，所选择的抛光工艺的晶片内分布模型以及晶片CMP之前的膜厚度，估计晶片的研磨过程中的膜厚度。 进行处理，由此确定抛光条件，限制了CMP之后的膜厚分布内的各位置的膜厚满足控制极限。

    Fabrication method for semiconductor integrated circuit device
    8.
    发明授权
    Fabrication method for semiconductor integrated circuit device 失效
    半导体集成电路器件的制造方法

    公开(公告)号：US06514864B2

    公开(公告)日：2003-02-04

    申请号：US09854578

    申请日：2001-05-15

    申请人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Katsuhiro Ota

    发明人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Katsuhiro Ota

    IPC分类号： H01L21302

    CPC分类号： H01L21/31053 ,  H01L21/76229 ,  H01L27/10852

    摘要： For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.

    摘要翻译： 为了进行化学机械抛光，同时将抛光浆料供给到通过批量生产过程的各个晶片的待处理表面，以通过降低用于化学机械的抛光浆料中的凝结颗粒的密度来抑制微细化的发生 抛光步骤，将所使用的抛光浆液在填充在容器中的状态下静置至少30天或更长时间，优选40天或更长时间，更优选50天或更长时间，使得具有尺寸的凝固颗粒的浓度 1mum以上为200,000个/ 0.5cc，优选为50,000个/ 0.5cc，更优选为20,000个/ 0.5cc。