发明授权
- 专利标题： Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen
- 专利标题（中）： 半导体器件制造采用湿式无定形膜凝结法
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申请号： US08622842申请日： 1996-03-27
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公开(公告)号： US06329269B1公开(公告)日： 2001-12-11
- 发明人: Hiroki Hamada , Kiichi Hirano , Akifumi Sasaki
- 申请人： Hiroki Hamada , Kiichi Hirano , Akifumi Sasaki
- 优先权： JP7-068253 19950327; JP7-216150 19950824
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.
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