Invention Grant
US06329272B1 Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
有权
用于迭代地，使用聚焦加热源选择性地调谐集成半导体器件的阻抗的方法和装置
- Patent Title: Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
- Patent Title (中): 用于迭代地，使用聚焦加热源选择性地调谐集成半导体器件的阻抗的方法和装置
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Application No.: US09332059Application Date: 1999-06-14
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Publication No.: US06329272B1Publication Date: 2001-12-11
- Inventor: Yves Gagnon , Michel Meunier , Yvon Savaria
- Applicant: Yves Gagnon , Michel Meunier , Yvon Savaria
- Main IPC: H01L2122
- IPC: H01L2122
Abstract:
The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of higher dopant concentration through the melting action of a focussed heating source, for example a laser. In particular the method is directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.
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