发明授权
- 专利标题： Semiconductor device and method of fabricating same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09151590申请日： 1998-09-11
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公开(公告)号： US06337517B1公开(公告)日： 2002-01-08
- 发明人: Hiroyuki Ohta , Hideo Miura , Kazushige Sato , Takeshi Kimura , Hiroo Masuda
- 申请人： Hiroyuki Ohta , Hideo Miura , Kazushige Sato , Takeshi Kimura , Hiroo Masuda
- 优先权： JP9-254688 19970919
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A semiconductor device capable of operating at a high speed or of having many functions. In this device, delamination of buried electrodes is prevented and thus high reliability is offered. The depth A of contact holes, the minimum linewidth R of a lower metallization layer, and the thickness B of the lower metallization layer satisfy relations given by (0.605/R)0.5
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