发明授权
- 专利标题： Method of forming semiconductive active area having a proximity gettering region therein and method of processing a monocrystalline silicon substrate to have a proximity gettering region
- 专利标题（中）： 形成其中具有接近吸气区域的半导体活性区域的方法和处理单晶硅衬底以具有接近吸气区域的方法
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申请号： US09799856申请日： 2001-03-05
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公开(公告)号： US06339011B1公开(公告)日： 2002-01-15
- 发明人: Fernando Gonzalez , Sergei Koveshnikov
- 申请人： Fernando Gonzalez , Sergei Koveshnikov
- 主分类号： H01L21322
- IPC分类号： H01L21322
摘要：
In one implementation, A method of forming semiconductive material active area having a proximity gettering region received therein includes providing a substrate comprising bulk semiconductive material. A proximity gettering region is formed within the bulk semiconductive material within a desired active area by ion implanting at least one impurity into the bulk semiconductive material. After forming the proximity gettering region, thickness of the bulk semiconductive material is increased in a blanket manner at least within the desired active area. In one implementation, a method of processing a monocrystalline silicon substrate includes forming a proximity gettering region within monocrystalline silicon of a monocrystalline silicon substrate. After forming the proximity gettering region, epitaxial monocrystalline silicon is formed on the substrate monocrystalline silicon to blanketly increase its thickness at least over the proximity gettering region.
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