发明授权
- 专利标题: Antifuse structure and process
- 专利标题(中): 形成反熔丝的方法
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申请号: US09106980申请日: 1998-06-29
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公开(公告)号: US06344373B1公开(公告)日: 2002-02-05
- 发明人: Arup Bhattacharyya , Robert M. Geffken , Chung H. Lam , Robert K. Leidy
- 申请人: Arup Bhattacharyya , Robert M. Geffken , Chung H. Lam , Robert K. Leidy
- 主分类号: H01L2182
- IPC分类号: H01L2182
摘要:
According to the preferred embodiment, an antifuse structure and method for personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment antifuse comprises a two layer transformable insulator core between two electrodes. The transformable core is normally non-conductive but can be transformed into a conductive material by supplying a sufficient voltage across the electrodes. The two layer core preferably comprises an injector layer and a dielectric layer. The injector layer preferably comprises a two phase material such as silicon rich nitride or silicon rich oxide. Initially, the injector layer and dielectric layer are non-conductive. When a sufficient voltage is applied the core fuses together and becomes conductive.