发明授权
US06346741B1 Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
有权
FeRAM电容器的化学机械抛光的组成和结构以及使用其制造FeRAM电容器的方法
- 专利标题： Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
- 专利标题（中）： FeRAM电容器的化学机械抛光的组成和结构以及使用其制造FeRAM电容器的方法
-
申请号： US09200499申请日： 1998-11-25
-
公开(公告)号： US06346741B1公开(公告)日： 2002-02-12
- 发明人: Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
- 申请人： Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
- 主分类号： H01L2940
- IPC分类号： H01L2940
摘要：
An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.