发明授权
US06347063B1 Semiconductor memory device including dynamic type memory and static type memory formed on the common chip and an operating method thereof
有权
半导体存储器件包括形成在公共芯片上的动态型存储器和静态型存储器及其操作方法
- 专利标题： Semiconductor memory device including dynamic type memory and static type memory formed on the common chip and an operating method thereof
- 专利标题（中）： 半导体存储器件包括形成在公共芯片上的动态型存储器和静态型存储器及其操作方法
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申请号： US09618568申请日： 2000-07-17
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公开(公告)号： US06347063B1公开(公告)日： 2002-02-12
- 发明人: Katsumi Dosaka , Toshiyuki Omoto , Masaki Kumanoya
- 申请人： Katsumi Dosaka , Toshiyuki Omoto , Masaki Kumanoya
- 优先权： JP4-322656 19921106; JP5-160265 19930604
- 主分类号： G11C800
- IPC分类号： G11C800
摘要：
A semiconductor memory device which is applicable not only to a cache system but to the field of graphic processing is provided. The semiconductor memory device includes a DRAM portion, an SRAM portion and a bidirectional data transfer circuit 106 which carries out data transfer between a DRAM array included in the DRAM portion and an SRAM array included in the SRAM portion as well as data input/output with the outside of the device. Driving of the DRAM array and data transfer operation between the DRAM array and the bidirectional data transfer circuit are controlled by a DRAM control circuit. Driving of the SRAM array, data transfer between the SRAM array and the bidirectional data transfer circuit, and the data input/output operation are controlled by the SRAM control circuit. The address to the DRAM array is applied to a DRAM array buffer 108, while an address for selecting a memory cell in the SRAM array is applied to the SRAM address buffer.
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