Invention Grant
US06361707B1 Apparatus and methods for upgraded substrate processing system with microwave plasma source
有权
具有微波等离子体源的升级基板处理系统的装置和方法
- Patent Title: Apparatus and methods for upgraded substrate processing system with microwave plasma source
- Patent Title (中): 具有微波等离子体源的升级基板处理系统的装置和方法
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Application No.: US09660322Application Date: 2000-09-12
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Publication No.: US06361707B1Publication Date: 2002-03-26
- Inventor: Tsutomu Tanaka , Mukul Kelkar , Kevin Fairbairn , Hari Ponnekanti , David Cheung
- Applicant: Tsutomu Tanaka , Mukul Kelkar , Kevin Fairbairn , Hari Ponnekanti , David Cheung
- Main IPC: H01L2100
- IPC: H01L2100

Abstract:
An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.
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