A new method and structure is provided for the simultaneous creation of inductive and capacitive components in a monolithic substrate. The invention provides a method and structure whereby a vertical spiral inductor is created on the surface of a substrate. Multiple capacitors are created inside the coils of the vertical spiral conductor. A base layer of dielectric is deposited over the surface of a semiconductor substrate, contact plugs are provided in the base layer of dielectric. Multiple layers of dielectric are deposited over the surface of the base layer, layers of coils are created in the multiple layers of dielectric. Vias are provided in the layer of dielectric to interconnect overlying coils of the spiral inductor. An etch stop layer is deposited on the surface of the upper layer of dielectric. At least two openings are etched in the multiple layers of dielectric, these at least two openings are surrounded by the coils of the spiral inductor and align with the contact plugs provided in the base layers. Spacers are formed on the sidewalls of the openings, the bottom electrode layer, dielectric layer and top electrode layer of the at least two capacitors are deposited over the spacers. The openings are filled with a conductive material, the surface of the conductive material is polished down to the surface of the etch stop.