Invention Grant
- Patent Title: Pressure sensor
- Patent Title (中): 压力传感器
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Application No.: US09356666Application Date: 1999-07-19
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Publication No.: US06363791B1Publication Date: 2002-04-02
- Inventor: Akihito Kurosaka , Osamu Nakao , Takanao Suzuki , Masahiro Sato , Hitoshi Nishimura
- Applicant: Akihito Kurosaka , Osamu Nakao , Takanao Suzuki , Masahiro Sato , Hitoshi Nishimura
- Main IPC: G01L912
- IPC: G01L912

Abstract:
A capacitance pressure sensor that prevents leakage from outside the sensor to the reference pressure cavity, has a structure that can decrease defects due to leakage compared to conventional technology. An electrode comprising a thin metallic layer is formed on the upper surface of a glass substrate that forms one of the substrates of a pressure sensor and an external electrode is formed on the surface edge of the substrate. In addition, in the region where the silicon substrate is bonded, a feedthrough extending from the electrode to the external electrode is formed, and spine shaped layers with three braches for blocking leakage gas are formed perpendicularly to the feedthrough.
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